Inventor · disambiguated record
Hideto Hidaka
Also filed as: HIDAKA HIDETO
302 granted patents·16 pending applications·8,601 citations·filing 1985–2019
99Inventor score
Files withMITSUBISHI ELECTRIC CORP177RENESAS TECH CORP120RENESAS ELECTRONICS CORP9MITSUBISHI CHEM CORP3MITSUBISHI ELECTRIC ENG2
Top patents by PatentIndex Score
318 records- 0199US7928759B2Low power consumption MIS semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Apr 19, 2011·65 cites·8 claims
- 0299US6349054B1Thin film magnetic memory device including memory cells having a magnetic tunnel junctionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 19, 2002·180 cites·15 claims
- 0399US6172918B1Semiconductor memory device allowing high-speed operation of internal data busesMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 9, 2001·478 cites·27 claims
- 0498US7741869B2Low power consumption MIS semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Jun 22, 2010·62 cites·4 claims
- 0598US7355455B2Low power consumption MIS semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 8, 2008·85 cites·7 claims
- 0698US6635934B2Semiconductor integrated circuit device operating with low power consumptionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 21, 2003·115 cites·5 claims
- 0798US6426908B1Semiconductor memory device with reduced current consumption in data hold modeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 30, 2002·152 cites·17 claims
- 0897US7436699B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Oct 14, 2008·78 cites·17 claims
- 0997US7423898B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Sep 9, 2008·62 cites·11 claims
- 1097US7042245B2Low power consumption MIS semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted May 9, 2006·107 cites·3 claims
- 1197US6608776B2Thin film magnetic memory device having a highly integrated memory arrayMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 19, 2003·107 cites·11 claims
- 1297US6018172ASemiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regionsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 25, 2000·234 cites·31 claims
- 1396US7521762B2Semiconductor integrated circuit device operating with low power consumptionRENESAS TECH CORP·Filed 2005·Granted Apr 21, 2009·27 cites·8 claims
- 1496US6421286B1Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated thereinMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·116 cites·16 claims
- 1596US6400621B2Semiconductor memory device and method of checking same for defectMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·78 cites·6 claims
- 1696US6384445B1Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regionsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 7, 2002·179 cites·22 claims
- 1795US6597617B2Semiconductor device with reduced current consumption in standby stateMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jul 22, 2003·83 cites·3 claims
- 1895US5222047AMethod and apparatus for driving word line in block access memoryMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jun 22, 1993·121 cites·6 claims
- 1994US7394717B2Semiconductor memory device, operational processing device and storage systemRENESAS TECH CORP·Filed 2006·Granted Jul 1, 2008·26 cites·31 claims
- 2094US6781874B2Thin film magnetic memory device including memory cells having a magnetic tunnel junctionRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·69 cites·8 claims
- 2194US6414894B2Semiconductor device with reduced current consumption in standby stateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·66 cites·16 claims
- 2294US6366515B2Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 2, 2002·69 cites·4 claims
- 2393US7394685B2Nonvolatile memory device with write error suppressed in reading dataRENESAS TECH CORP·Filed 2006·Granted Jul 1, 2008·29 cites·10 claims
- 2493US6788568B2Thin film magnetic memory device capable of conducting stable data read and write operationsRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·47 cites·10 claims
- 2593US6646911B2Thin film magnetic memory device having data read current tuning functionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 11, 2003·71 cites·14 claims
- 2693US6587371B1Memory device having wide margin of data reading operation, for storing data by change in electric resistance valueMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 1, 2003·71 cites·12 claims
- 2793US6359805B1Thin film magnetic memory device capable of easily controlling a data write currentMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 19, 2002·70 cites·21 claims
- 2893US5933377ASemiconductor memory device and defect repair method for semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 3, 1999·91 cites·9 claims
- 2993US5687123ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 11, 1997·66 cites·42 claims
- 3092US7233537B2Thin film magnetic memory device provided with a dummy cell for data read referenceMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Jun 19, 2007·69 cites·25 claims
- 3192US6778430B2Magnetic thin-film memory device for quick and stable reading dataRENESAS TECH CORP·Filed 2001·Granted Aug 17, 2004·60 cites·40 claims
- 3292US5970507ASemiconductor memory device having a refresh-cycle program circuitMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 19, 1999·102 cites·15 claims
- 3392US4837747ARedundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell blockMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jun 6, 1989·77 cites·18 claims
- 3491US5973983ASemiconductor memory device having a hierarchical bit line structure with reduced interference noiseMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 26, 1999·81 cites·20 claims
- 3591US5936443APower-on reset signal generator for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 10, 1999·73 cites·12 claims
- 3691US5249155ASemiconductor device incorporating internal voltage down converting circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 28, 1993·81 cites·35 claims
- 3791US5179687ASemiconductor memory device containing a cache and an operation method thereofMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 12, 1993·165 cites·16 claims
- 3890US6842366B2Thin film magnetic memory device executing self-reference type data readRENESAS TECH CORP·Filed 2003·Granted Jan 11, 2005·55 cites·16 claims
- 3990US6795335B2Thin film magnetic memory device for conducting data write operation by application of a magnetic fieldRENESAS TECH CORP·Filed 2002·Granted Sep 21, 2004·41 cites·30 claims
- 4090US6501679B2Thin film magnetic device including memory cells having a magnetic tunnel junctionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 31, 2002·35 cites·11 claims
- 4190US6487136B2Semiconductor memory device with reduced current consumption in data hold modeMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 26, 2002·48 cites·3 claims
- 4290US6424582B1Semiconductor memory device having redundancyMITSUBISHI DENKI KASBUSHIKI KA·Filed 1999·Granted Jul 23, 2002·84 cites·18 claims
- 4390US6400632B1Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fallMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·56 cites·16 claims
- 4490US6233181B1Semiconductor memory device with improved flexible redundancy schemeRENESAS TECH CORP·Filed 1999·Granted May 15, 2001·58 cites·7 claims
- 4589US11020685B2Method for producing alcoholMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 1, 2021·2 cites·14 claims
- 4689US8351253B2Thin film magnetic memory device capable of conducting stable data read and write operationsRENESAS ELECTRONICS CORP·Filed 2011·Granted Jan 8, 2013·7 cites·8 claims
- 4789US6678195B2Semiconductor memory device with improved flexible redundancy schemeRENESAS TECH CORP·Filed 2003·Granted Jan 13, 2004·37 cites·3 claims
- 4889US5610871ASemiconductor memory device having a hierarchical bit line structure with reduced interference noiseMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 11, 1997·65 cites·32 claims
- 4988US6614681B2Thin film magnetic memory device with memory cells including a tunnel magnetic resistive elementMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 2, 2003·37 cites·4 claims
- 5088US6384674B2Semiconductor device having hierarchical power supply line structure improved in operating speedMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 7, 2002·73 cites·18 claims
Showing the top 50 of 318 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →