Inventor · disambiguated record
Hisanori Ihara
Also filed as: IHARA HISANORI
40 granted patents·4 pending applications·1,618 citations·filing 1992–2020
98Inventor score
Top patents by PatentIndex Score
44 records- 0198US5527417APhoto-assisted CVD apparatusTOSHIBA KK·Filed 1995·Granted Jun 18, 1996·807 cites·12 claims
- 0297US9305947B2Image sensors having deep trenches including negative charge materialIHARA HISANORI·Filed 2015·Granted Apr 5, 2016·17 cites·16 claims
- 0397US8716769B2Image sensors including color adjustment pathIHARA HISANORI·Filed 2012·Granted May 6, 2014·29 cites·20 claims
- 0494US9564463B2Methods of fabricating image sensors having deep trenches including negative charge materialIHARA HISANORI·Filed 2016·Granted Feb 7, 2017·11 cites·21 claims
- 0594US8987751B2Photodiode device based on wide bandgap material layer and back-side illumination (BSI) CMOS image sensor and solar cell including the photodiode deviceIHARA HISANORI·Filed 2011·Granted Mar 24, 2015·14 cites·10 claims
- 0694US6690423B1Solid-state image pickup apparatusTOSHIBA KK·Filed 1999·Granted Feb 10, 2004·142 cites·21 claims
- 0793US7855406B2Solid-state imaging device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Dec 21, 2010·22 cites·9 claims
- 0892US10199423B2CMOS image sensors including a vertical source follower gateSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·9 cites·16 claims
- 0992US9025063B2Unit pixel of image sensor and pixel array including the unit pixelSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 5, 2015·12 cites·12 claims
- 1090US10950650B2Complementary metal-oxide-semiconductor image sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 16, 2021·2 cites·20 claims
- 1189US9337224B2CMOS image sensor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·5 cites·14 claims
- 1289US6674470B1MOS-type solid state imaging device with high sensitivityTOSHIBA KK·Filed 1997·Granted Jan 6, 2004·124 cites·28 claims
- 1389US6211509B1Solid-state image sensorTOSHIBA KK·Filed 1999·Granted Apr 3, 2001·98 cites·24 claims
- 1488US7259412B2Solid state imaging deviceTOSHIBA KK·Filed 2005·Granted Aug 21, 2007·13 cites·15 claims
- 1588US6521925B1Solid-state image sensorTOSHIBA KK·Filed 2000·Granted Feb 18, 2003·52 cites·20 claims
- 1687US10181492B2Complementary metal-oxide-semiconductor image sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 15, 2019·4 cites·8 claims
- 1786US7224003B2Solid-state image pickup apparatusTOSHIBA KK·Filed 2006·Granted May 29, 2007·8 cites·9 claims
- 1885US7385270B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2005·Granted Jun 10, 2008·8 cites·5 claims
- 1981US10192910B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 29, 2019·3 cites·20 claims
- 2081US7709870B2CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main bodyTOSHIBA KK·Filed 2006·Granted May 4, 2010·6 cites·12 claims
- 2181US7554141B2Solid-state image pickup device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jun 30, 2009·6 cites·17 claims
- 2280US10424611B2Image sensor including first and second overlapping device isolation patternsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 24, 2019·3 cites·11 claims
- 2380US6072206ASolid state image sensorTOSHIBA KK·Filed 1999·Granted Jun 6, 2000·56 cites·10 claims
- 2479US7176507B2Solid state image sensing device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Feb 13, 2007·5 cites·11 claims
- 2579US7042061B2Solid-state image pickup apparatusTOSHIBA KK·Filed 2003·Granted May 9, 2006·20 cites·10 claims
- 2677US7889255B2Solid-state imaging device comprising a signal storage section including a highly doped areaTOSHIBA KK·Filed 2005·Granted Feb 15, 2011·5 cites·6 claims
- 2776US9318521B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 19, 2016·1 cites·8 claims
- 2875US6344666B1Amplifier-type solid-state image sensor deviceTOSHIBA KK·Filed 1999·Granted Feb 5, 2002·46 cites·21 claims
- 2974US7696547B2Semiconductor device with burried semiconductor regionsTOSHIBA KK·Filed 2005·Granted Apr 13, 2010·3 cites·11 claims
- 3073US6344670B2Solid-state sensor and systemTOSHIBA KK·Filed 2001·Granted Feb 5, 2002·15 cites·12 claims
- 3171US11495633B2Complementary metal-oxide-semiconductor image sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·16 claims
- 3269US6271554B1Solid-state image sensor having a substrate with an impurity concentration gradientTOSHIBA KK·Filed 1998·Granted Aug 7, 2001·30 cites·6 claims
- 3368US9793310B2Image sensor devices using offset pixel patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 17, 2017·1 cites·9 claims
- 3466US10658413B2Semiconductor device including via plugSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 19, 2020·1 cites·19 claims
- 3564US6441411B2Solid-state image sensor having a substrate with an impurity concentration gradientTOSHIBA KK·Filed 2000·Granted Aug 27, 2002·9 cites·8 claims
- 3663US10615216B2Complementary metal-oxide-semiconductor image sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 7, 2020·0 cites·11 claims
- 3760US8653436B2CMOS pixel including a transfer gate overlapping the photosensitive regionIHARA HISANORI·Filed 2009·Granted Feb 18, 2014·0 cites·21 claims
- 3852US6194244B1Method of manufacturing a photodiode in a solid-state deviceTOSHIBA KK·Filed 1998·Granted Feb 27, 2001·14 cites·8 claims
- 3949US2015070553A1Image sensor, image processing system including the same, and method of operating the sameLEE KYUNG HO·Filed 2014·Application pending·0 cites
- 4048US5378541ASilicon thin film memberTOSHIBA KK·Filed 1992·Granted Jan 3, 1995·14 cites·12 claims
- 4148US2007153108A1Solid-state image sensorIHARA HISANORI·Filed 2007·Application pending·0 cites
- 4247US2006202235A1Solid-state imaging apparatus in which a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged two-dimensionallyIHARA HISANORI·Filed 2006·Application pending·0 cites
- 4344US2009008686A1Solid-state imaging device with improved charge transfer efficiencyMAEDA MOTOHIRO·Filed 2008·Application pending·0 cites
- 4432US5484658ASilicon thin film memberTOSHIBA KK·Filed 1994·Granted Jan 16, 1996·3 cites·6 claims
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