Inventor · disambiguated record
Hirotaka Ikeda
Also filed as: IKEDA HIROTAKA
14 granted patents·2 pending applications·15 citations·filing 2013–2024
88Inventor score
Files withMITSUBISHI CHEM CORP16
Top patents by PatentIndex Score
16 records- 0191US11038024B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 15, 2021·4 cites·19 claims
- 0291US10475887B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Nov 12, 2019·5 cites·15 claims
- 0389US11031475B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 8, 2021·3 cites·18 claims
- 0487US11664428B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2021·Granted May 30, 2023·1 cites·13 claims
- 0583US12107129B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 0677US10995421B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2019·Granted May 4, 2021·0 cites·9 claims
- 0772US10734485B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2017·Granted Aug 4, 2020·1 cites·17 claims
- 0872US10309038B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2017·Granted Jun 4, 2019·0 cites·13 claims
- 0968US11670687B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2020·Granted Jun 6, 2023·0 cites·15 claims
- 1068US9673046B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2015·Granted Jun 6, 2017·1 cites·18 claims
- 1166US9890474B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2015·Granted Feb 13, 2018·0 cites·19 claims
- 1261US2025122642A1GaN CRYSTAL AND GaN WAFERMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1360US10570530B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2018·Granted Feb 25, 2020·0 cites·18 claims
- 1459US10023976B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2017·Granted Jul 17, 2018·0 cites·20 claims
- 1558US9840791B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2014·Granted Dec 12, 2017·0 cites·17 claims
- 1646US2013264606A1Group iii nitride semiconductor substrate and method for producing the same, and semiconductor light-emitting device and method for producing the sameMITSUBISHI CHEM CORP·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →