Inventor · disambiguated record
Hironori Ishikawa
Also filed as: ISHIKAWA HIRONORI
10 granted patents·8 pending applications·78 citations·filing 1990–2022
87Inventor score
Files withNTT DOCOMO INC7TOSHIBA KK5MITSUBISHI CHEM CORP2NIPPON TELEGRAPH & TELEPHONE1SUPER WAVE CORP1
Top patents by PatentIndex Score
18 records- 0184US7292843B2Function-limiting device and function-limiting methodNTT DOCOMO INC·Filed 2005·Granted Nov 6, 2007·13 cites·6 claims
- 0275US9365767B2Organic electric field light emitting element and production thereforYABE MASAYOSHI·Filed 2006·Granted Jun 14, 2016·4 cites·14 claims
- 0374US5300185AMethod of manufacturing III-V group compound semiconductorTOSHIBA KK·Filed 1992·Granted Apr 5, 1994·27 cites·8 claims
- 0471US7216995B2Deployable reflectorNIPPON TELEGRAPH & TELEPHONE·Filed 2004·Granted May 15, 2007·14 cites·10 claims
- 0561US9445358B2Mobile communication terminal, server apparatus, controlling system, controlling method, and programNTT DOCOMO INC·Filed 2013·Granted Sep 13, 2016·2 cites·10 claims
- 0658US9640769B2Organic electric field light emitting element and production thereforMITSUBISHI CHEM CORP·Filed 2016·Granted May 2, 2017·0 cites·15 claims
- 0757US2022142939A1Transfer sheetTOPPAN INC·Filed 2022·Application pending·0 cites
- 0857US2010015786A1Vapor growth apparatus, vapor growth method, and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2009·Application pending·0 cites
- 0954US2025345940A1Human augmentation platform device and physical ability augmentation methodNTT DOCOMO INC·Filed 2022·Application pending·0 cites
- 1052US2011215312A1Organic electric field light emitting element and production thereforMITSUBISHI CHEM CORP·Filed 2011·Application pending·0 cites
- 1149US2023043224A1Management apparatusNTT DOCOMO INC·Filed 2020·Application pending·0 cites
- 1249US2008014967A1Mobile communication terminalNTT DOCOMO INC·Filed 2007·Application pending·0 cites
- 1347US2005250446A1Mobile communication terminalSUPER WAVE CORP·Filed 2005·Application pending·0 cites
- 1445US5213654AVapor-phase epitaxial growth method for semiconductor crystal layersTOSHIBA KK·Filed 1991·Granted May 25, 1993·7 cites·26 claims
- 1539US11680832B2Detection deviceNTT DOCOMO INC·Filed 2019·Granted Jun 20, 2023·0 cites·11 claims
- 1638US5229319AMethod for producing compound semiconductors and apparatus thereforTOSHIBA KK·Filed 1990·Granted Jul 20, 1993·11 cites·2 claims
- 1736US2011169081A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2011·Application pending·0 cites
- 1829US10455545B2Information communication terminal, peripheral device cooperation method, and programNTT DOCOMO INC·Filed 2015·Granted Oct 22, 2019·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →