Inventor · disambiguated record
Hiroshi Ishiwara
Also filed as: ISHIWARA HIROSHI
7 granted patents·74 citations·filing 1999–2003
84Inventor score
Top patents by PatentIndex Score
7 records- 0175US6327172B1Ferroelectric non-volatile memory deviceSEMICONDUCTOR TECH ACAD RES CT·Filed 2000·Granted Dec 4, 2001·23 cites·20 claims
- 0271US7205256B2Oxide material, method for preparing oxide thin film and element using said materialJAPAN REPRESENTED BY PRESIDENT·Filed 2001·Granted Apr 17, 2007·19 cites·10 claims
- 0367US6362500B2Memory structure in ferroelectric nonvolatile memory and readout method thereforSEMICONDUCTOR TECH ACAD RES CT·Filed 2000·Granted Mar 26, 2002·16 cites·6 claims
- 0452US6188600B1Memory structure in ferroelectric nonvolatile memory and readout method thereforSEMICONDUCTOR TECH ACAD RES CT·Filed 1999·Granted Feb 13, 2001·13 cites·9 claims
- 0538US6584008B2Ferroelectric non-volatile memory device including a layered structure formed on a substrateSEMICONDUCTOR TECH ACAD RES CT·Filed 2001·Granted Jun 24, 2003·2 cites·9 claims
- 0637US6420745B2Nonvolatile ferroelectric memory and its manufacturing methodSEMICONDUCTOR TECH ACAD RES CT·Filed 2001·Granted Jul 16, 2002·1 cites·13 claims
- 0735US7063899B2Compositional buffers for electronic ceramics containing volatile elements and the fabrication methodTOKYO INST TECH·Filed 2003·Granted Jun 20, 2006·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →