Inventor · disambiguated record
Hironori Itoh
Also filed as: ITOH HIRONORI
15 granted patents·4 pending applications·113 citations·filing 1996–2021
89Inventor score
Top patents by PatentIndex Score
19 records- 0185US10490634B2Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Nov 26, 2019·3 cites·8 claims
- 0279US10396163B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Aug 27, 2019·3 cites·22 claims
- 0379US7732015B2Process for producing nanoparticle or nanostructure with use of nanoporous materialJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Jun 8, 2010·8 cites·7 claims
- 0478US5731952APortable electronic apparatus having the heat radiation device for circuit moduleTOSHIBA KK·Filed 1996·Granted Mar 24, 1998·90 cites·20 claims
- 0577US10612160B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Apr 7, 2020·2 cites·5 claims
- 0676US10770550B2Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Sep 8, 2020·1 cites·9 claims
- 0775US9957641B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 1, 2018·2 cites·5 claims
- 0874US10121865B2Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Nov 6, 2018·2 cites·17 claims
- 0969US12014924B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 18, 2024·1 cites·11 claims
- 1069US11004941B2Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 11, 2021·0 cites·12 claims
- 1166US10697086B2Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jun 30, 2020·1 cites·4 claims
- 1252US2013298822A1Silicon melt contact member, process for production thereof, and process for production of crystalline siliconKOMATSU RYUICHI·Filed 2012·Application pending·0 cites
- 1348US2023059737A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 1443US11373868B2Method for manufacturing silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 28, 2022·0 cites·8 claims
- 1539US10825903B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Nov 3, 2020·0 cites·16 claims
- 1639US10811500B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Oct 20, 2020·0 cites·8 claims
- 1736US10865501B2Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Dec 15, 2020·0 cites·5 claims
- 1836US2019013198A1Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Application pending·0 cites
- 1933US2018233562A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →