Inventor · disambiguated record
Hiroshi Kambayashi
Also filed as: KAMBAYASHI HIROSHI · SATO YOSHIHIRO
14 granted patents·9 pending applications·84 citations·filing 2006–2014
90Inventor score
Files withFURUKAWA ELECTRIC CO LTD8KAMBAYASHI HIROSHI4UNIV TOHOKU3NIIYAMA YUKI2NIPPON SHEET GLASS CO LTD2
Top patents by PatentIndex Score
23 records- 0191US9230799B2Method for fabricating semiconductor device and the semiconductor deviceTERAMOTO AKINOBU·Filed 2012·Granted Jan 5, 2016·14 cites·11 claims
- 0286US7812371B2GaN based semiconductor elementFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Oct 12, 2010·14 cites·12 claims
- 0383US8072002B2Field effect transistorNIYAMA YUKI·Filed 2009·Granted Dec 6, 2011·19 cites·19 claims
- 0479US8093626B2Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistorNIIYAMA YUKI·Filed 2007·Granted Jan 10, 2012·10 cites·6 claims
- 0574US7821035B2ED inverter circuit and integrate circuit element including the sameFURUKAWA ELECTRIC CO LTD·Filed 2008·Granted Oct 26, 2010·6 cites·14 claims
- 0673US8304809B2GaN-based semiconductor device and method of manufacturing the sameKAYA SHUSUKE·Filed 2008·Granted Nov 6, 2012·7 cites·20 claims
- 0773US7855155B2Process for producing semiconductor device using optical absorption layerFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Dec 21, 2010·5 cites·15 claims
- 0866US8525225B2Semiconductor deviceKAMBAYASHI HIROSHI·Filed 2006·Granted Sep 3, 2013·4 cites·7 claims
- 0966US7998848B2Method of producing field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Aug 16, 2011·2 cites·10 claims
- 1065US8906796B2Method of producing semiconductor transistorKAMBAYASHI HIROSHI·Filed 2011·Granted Dec 9, 2014·2 cites·6 claims
- 1164US8999788B2Manufacturing method of GaN-based semiconductor device and semiconductor deviceUNIV TOHOKU·Filed 2013·Granted Apr 7, 2015·1 cites·11 claims
- 1254US2014367699A1Method for fabricating semiconductor device and the semiconductor deviceUNIV TOHOKU·Filed 2014·Application pending·0 cites
- 1349US2013149828A1GaN-based Semiconductor Element and Method of Manufacturing the SameFURUKAWA ELECTRIC CO LTD·Filed 2013·Application pending·0 cites
- 1448US9048302B2Field effect transistor having semiconductor operating layer formed with an inclined side wallSATO YOSHIHIRO·Filed 2009·Granted Jun 2, 2015·0 cites·20 claims
- 1548US2009105061A1Glass Composition and Glass Spacer Using the SameNIPPON SHEET GLASS CO LTD·Filed 2007·Application pending·0 cites
- 1648US2010041146A1Three-dimensional cell culture carrier and method for cell culture using the sameNIPPON SHEET GLASS CO LTD·Filed 2008·Application pending·0 cites
- 1746US8350293B2Field effect transistor and method of manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Jan 8, 2013·0 cites·7 claims
- 1845US2011049529A1GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAMEFURUKAWA ELECTRIC CO LTD·Filed 2010·Application pending·0 cites
- 1943US2015069410A1Semiconductor device, method of manufacturing the same, schottky barrier diode, and field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2014·Application pending·0 cites
- 2042US9875899B2Semiconductor transistorKAMBAYASHI HIROSHI·Filed 2011·Granted Jan 23, 2018·0 cites·17 claims
- 2142US2013309828A1Manufacturing method of semiconductor deviceUNIV TOHOKU·Filed 2013·Application pending·0 cites
- 2241US2010117186A1Semiconductor device and method of producing the sameKAMBAYASHI HIROSHI·Filed 2009·Application pending·0 cites
- 2332US2010219455A1Iii-nitride semiconductor field effect transistorNIIYAMA YUKI·Filed 2010·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Hiroshi Kambayashi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →