Inventor · disambiguated record
Hiroyuki Kanaya
Also filed as: KANAYA HIROYUKI
63 granted patents·42 pending applications·1,284 citations·filing 1995–2025
99Inventor score
Top patents by PatentIndex Score
105 records- 0197US6611014B1Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·167 cites·31 claims
- 0296US5990507ASemiconductor device having ferroelectric capacitor structuresTOSHIBA KK·Filed 1997·Granted Nov 23, 1999·229 cites·7 claims
- 0393US9306152B2Magnetic memory and method for manufacturing the sameIWAYAMA MASAYOSHI·Filed 2014·Granted Apr 5, 2016·12 cites·14 claims
- 0493US8969983B2Semiconductor storage device and manufacturing method thereofKANAYA HIROYUKI·Filed 2012·Granted Mar 3, 2015·12 cites·12 claims
- 0592US9276195B2Magnetic random access memoryKANAYA HIROYUKI·Filed 2013·Granted Mar 1, 2016·11 cites·7 claims
- 0690US6982453B2Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jan 3, 2006·49 cites·1 claims
- 0790US5818869ASpread spectrum communication synchronizing method and its circuitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Oct 6, 1998·108 cites·5 claims
- 0890US5757870ASpread spectrum communication synchronizing method and its circuitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 26, 1998·110 cites·24 claims
- 0989US6603161B2Semiconductor device having ferroelectric capacitor and method for manufacturing the sameTOSHIBA KK·Filed 2001·Granted Aug 5, 2003·43 cites·11 claims
- 1088US10043852B2Magnetoresistive memory device and manufacturing method of the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Aug 7, 2018·6 cites·9 claims
- 1187US9105572B2Magnetic memory and manufacturing method thereofKANAYA HIROYUKI·Filed 2014·Granted Aug 11, 2015·11 cites·15 claims
- 1287US6642563B2Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the sameTOSHIBA KK·Filed 2001·Granted Nov 4, 2003·51 cites·34 claims
- 1387US6611015B2Semiconductor device including dummy upper electrodeTOSHIBA KK·Filed 2001·Granted Aug 26, 2003·29 cites·29 claims
- 1486US6982444B2Ferroelectric memory device having a hydrogen barrier filmTOSHIBA KK·Filed 2003·Granted Jan 3, 2006·30 cites·12 claims
- 1585US6190957B1Method of forming a ferroelectric deviceTOSHIBA KK·Filed 1999·Granted Feb 20, 2001·70 cites·13 claims
- 1684US7504684B2Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2005·Granted Mar 17, 2009·11 cites·13 claims
- 1783US7446362B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Nov 4, 2008·8 cites·1 claims
- 1882US7339218B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Mar 4, 2008·23 cites·7 claims
- 1980US7402858B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 22, 2008·6 cites·1 claims
- 2080US7022531B2Semiconductor memory device and method of fabricating the sameTOSHIBA KK·Filed 2003·Granted Apr 4, 2006·18 cites·2 claims
- 2179US6847073B2Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the sameTOSHIBA KK·Filed 2003·Granted Jan 25, 2005·25 cites·30 claims
- 2278US11482572B2Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory elementKIOXIA CORP·Filed 2020·Granted Oct 25, 2022·1 cites·20 claims
- 2377US6586790B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Jul 1, 2003·32 cites·10 claims
- 2475US12514133B2Magnetic storage deviceKIOXIA CORP·Filed 2023·Granted Dec 30, 2025·0 cites·5 claims
- 2575US6680499B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Jan 20, 2004·20 cites·18 claims
- 2674US7501675B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Mar 10, 2009·6 cites·17 claims
- 2774US6521927B2Semiconductor device and method for the manufacture thereofTOSHIBA KK·Filed 1998·Granted Feb 18, 2003·41 cites·8 claims
- 2874US6303958B1Semiconductor integrated circuit and method for manufacturing the sameTOSHIBA KK·Filed 1998·Granted Oct 16, 2001·34 cites·24 claims
- 2973US7400005B2Semiconductor memory device having ferroelectric capacitors with hydrogen barriersTOSHIBA KK·Filed 2005·Granted Jul 15, 2008·5 cites·12 claims
- 3072US2025260533A1Wireless communication control device and wireless communication control method to coordinate reference signal waveformsPANASONIC IP CORP AMERICA·Filed 2025·Application pending·0 cites
- 3171US7429508B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Sep 30, 2008·3 cites·10 claims
- 3270US9887237B2Magnetic storage deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Feb 6, 2018·3 cites·4 claims
- 3370US7190015B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Mar 13, 2007·14 cites·14 claims
- 3470US6855565B2Semiconductor device having ferroelectric film and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Feb 15, 2005·12 cites·3 claims
- 3570US6699726B2Semiconductor device and method for the manufacture thereofTOSHIBA KK·Filed 2003·Granted Mar 2, 2004·15 cites·2 claims
- 3669US12471499B2Magnetic device and magnetic storage deviceKIOXIA CORP·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 3769US8592928B2Magnetic random access memory and method of manufacturing the sameHOSOTANI KEIJI·Filed 2011·Granted Nov 26, 2013·2 cites·6 claims
- 3867US7573120B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Aug 11, 2009·2 cites·9 claims
- 3966US7700987B2Ferroelectric memory device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Apr 20, 2010·3 cites·7 claims
- 4066US6677630B1Semiconductor device having ferroelectric film and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Jan 13, 2004·21 cites·22 claims
- 4164US7531408B2Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitorTOSHIBA KK·Filed 2007·Granted May 12, 2009·1 cites·5 claims
- 4263US6762065B2Semiconductor device having ferroelectric capacitor and method for manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jul 13, 2004·7 cites·24 claims
- 4362US8080841B2Semiconductor device having a ferroelectric capacitor and method of manufacturing the sameKANAYA HIROYUKI·Filed 2009·Granted Dec 20, 2011·2 cites·10 claims
- 4460US8786038B2Semiconductor storage device and method of manufacturing the sameHOSOTANI KEIJI·Filed 2011·Granted Jul 22, 2014·1 cites·18 claims
- 4560US2025380256A1Access point, terminal, and communication methodPANASONIC IP CORP AMERICA·Filed 2023·Application pending·0 cites
- 4659US7095068B2Semiconductor memory device having ferroelectric capacitor and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Aug 22, 2006·7 cites·27 claims
- 4759US6511877B2Semiconductor integrated circuit and method for manufacturing the sameTOSHIBA KK·Filed 2001·Granted Jan 28, 2003·6 cites·5 claims
- 4858US7750383B2Semiconductor apparatus and method for manufacturing the semiconductor apparatusTOSHIBA KK·Filed 2007·Granted Jul 6, 2010·1 cites·10 claims
- 4958US2024292631A1Semiconductor storage device and manufacturing method thereforKIOXIA CORP·Filed 2024·Application pending·0 cites
- 5057US6750093B2Semiconductor integrated circuit and method for manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jun 15, 2004·5 cites·10 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →