Inventor · disambiguated record
Hisaki Kato
Also filed as: KATO HISAKI
40 granted patents·5 pending applications·1,191 citations·filing 1988–2022
98Inventor score
Files withTOYODA GOSEI KK26HAMAMATSU PHOTONICS KK9YOKOHAMA RUBBER CO LTD2AKASAKI ISAMU1DENSO WAVE INC1
Top patents by PatentIndex Score
45 records- 0198US7138286B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2005·Granted Nov 21, 2006·47 cites·2 claims
- 0295US5122845ASubstrate for growing gallium nitride compound-semiconductor device and light emitting diodeTOYODA GOSEI KK·Filed 1990·Granted Jun 16, 1992·217 cites·10 claims
- 0391US5620557ASapphireless group III nitride semiconductor and method for making sameTOYODA GOSEI KK·Filed 1995·Granted Apr 15, 1997·139 cites·12 claims
- 0489US5278433ALight-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layerTOYODA GOSEI KK·Filed 1992·Granted Jan 11, 1994·86 cites·19 claims
- 0587US6423984B1Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 1999·Granted Jul 23, 2002·85 cites·5 claims
- 0687US6005258ALight-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impuritiesTOYODA GOSEI KK·Filed 1997·Granted Dec 21, 1999·69 cites·13 claims
- 0786US7115854B1Photomultiplier and photodetector including the sameHAMAMATSU PHOTONICS KK·Filed 2005·Granted Oct 3, 2006·12 cites·10 claims
- 0886US6362017B1Light-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 2000·Granted Mar 26, 2002·44 cites·24 claims
- 0985US6265726B1Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 1999·Granted Jul 24, 2001·62 cites·9 claims
- 1085US5733796ALight-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1995·Granted Mar 31, 1998·77 cites·2 claims
- 1184US7922439B2Industrial robotDENSO WAVE INC·Filed 2008·Granted Apr 12, 2011·13 cites·7 claims
- 1283US7867800B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2007·Granted Jan 11, 2011·5 cites·3 claims
- 1383US6617668B1Methods and devices using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Sep 9, 2003·25 cites·5 claims
- 1480US5604763AGroup III nitride compound semiconductor laser diode and method for producing sameTOYODA GOSEI KK·Filed 1995·Granted Feb 18, 1997·49 cites·8 claims
- 1577US12441140B2Solid tire and method for manufacturing sameYOKOHAMA RUBBER CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·13 claims
- 1677US7332366B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2006·Granted Feb 19, 2008·3 cites·2 claims
- 1774US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 1873US6881651B2Methods and devices using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Apr 19, 2005·13 cites·15 claims
- 1973US6853009B2Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2002·Granted Feb 8, 2005·16 cites·4 claims
- 2071US7623243B2Spectroscopic deviceHAMAMATSU PHOTONICS KK·Filed 2004·Granted Nov 24, 2009·14 cites·6 claims
- 2170US5481158AElectron multiplier with improved dynode geometry for reduced crosstalkHAMAMATSU PHOTONICS KK·Filed 1993·Granted Jan 2, 1996·26 cites·24 claims
- 2267US2014239313A1Light-emitting semiconductor device using group iii nitrogen compoundTOYODA GOSEI KK·Filed 2014·Application pending·0 cites
- 2366US7323674B2Photodetector using photomultiplier and gain control methodHAMAMATSU PHOTONICS KK·Filed 2006·Granted Jan 29, 2008·2 cites·6 claims
- 2463US5007718AElectrochromic elements and methods of manufacturing and driving the sameTOYODA CHUO KENKYUSHO KK·Filed 1988·Granted Apr 16, 1991·23 cites·11 claims
- 2562US7403286B2Spectroscopic analyzing apparatusHAMAMATSU PHOTONICS KK·Filed 2006·Granted Jul 22, 2008·3 cites·12 claims
- 2662US5905276ALight emitting semiconductor device using nitrogen-Group III compoundAKASAKI ISAMU·Filed 1997·Granted May 18, 1999·34 cites·11 claims
- 2762US2012217510A1Light-emitting semiconductor device using group iii nitrogen compoundMANABE KATSUHIDE·Filed 2012·Application pending·0 cites
- 2862US2024416682A1Solid tire and method for manufacturing sameYOKOHAMA RUBBER CO LTD·Filed 2022·Application pending·0 cites
- 2961US6794629B2PhotomultiplierHAMAMATSU PHOTONICS KK·Filed 2002·Granted Sep 21, 2004·5 cites·4 claims
- 3061US6607595B1Method for producing a light-emitting semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Aug 19, 2003·8 cites·100 claims
- 3161US6472690B1Gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·7 cites·37 claims
- 3259US2011101412A1Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2011·Application pending·0 cites
- 3358US7045809B2Light-emitting semiconductor device using gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted May 16, 2006·5 cites·9 claims
- 3456US7001790B2Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 2001·Granted Feb 21, 2006·3 cites·3 claims
- 3556US6617787B2Light-emitting system with alicyclic epoxy sealing memberTOYODA GOSEI KK·Filed 2001·Granted Sep 9, 2003·7 cites·18 claims
- 3655US6249012B1Light emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1997·Granted Jun 19, 2001·13 cites·9 claims
- 3753US8122834B2Suspension type robot whose robot body runs along traveling railKATO HISAKI·Filed 2009·Granted Feb 28, 2012·3 cites·9 claims
- 3853US6984536B2Method for manufacturing a gallium nitride group compound semiconductorUNIV NAGOYA·Filed 2002·Granted Jan 10, 2006·4 cites·51 claims
- 3951US5719390APhotodetection tube with a lid and cathode holding member in thermal contact with a coolerHAMAMATSU PHOTONICS KK·Filed 1995·Granted Feb 17, 1998·11 cites·2 claims
- 4047US6830992B1Method for manufacturing a gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Dec 14, 2004·1 cites·32 claims
- 4146US7102284B2PhotomultiplierHAMAMATSU PHOTONICS KK·Filed 2002·Granted Sep 5, 2006·1 cites·13 claims
- 4241US6472689B1Light emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·0 cites·37 claims
- 4335US2004169192A1Method for producing group III nitride compounds semiconductorFiled 2002·Application pending·0 cites
- 4434US6593599B1Light-emitting semiconductor device using gallium nitride group compoundJAPAN SCIENCE & TECH CORP·Filed 1999·Granted Jul 15, 2003·2 cites·41 claims
- 4527US5886341APhotodetection tube with a slidably adapted cathode substrateHAMAMATSU PHOTONICS KK·Filed 1997·Granted Mar 23, 1999·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →