Inventor · disambiguated record
Hiroji Kawai
Also filed as: KAWAI HIROJI
37 granted patents·7 pending applications·1,738 citations·filing 1975–2023
98Inventor score
Files withSONY CORP31POWDEC KK5AGENCY IND SCIENCE TECHN1CHIYODA CHEM ENG CONSTRUCT CO1KUWATA CO LTD1
Top patents by PatentIndex Score
44 records- 0197US6064082AHeterojunction field effect transistorSONY CORP·Filed 1998·Granted May 16, 2000·333 cites·9 claims
- 0297US5929467AField effect transistor with nitride compoundSONY CORP·Filed 1997·Granted Jul 27, 1999·270 cites·15 claims
- 0395US6468902B2Semiconductor device and its manufacturing methodSONY CORP·Filed 2001·Granted Oct 22, 2002·49 cites·11 claims
- 0494US5123836AMethod for the combustion treatment of toxic gas-containing waste gasCHIYODA CHEM ENG CONSTRUCT CO·Filed 1989·Granted Jun 23, 1992·116 cites·22 claims
- 0592US6140169AMethod for manufacturing field effect transistorSONY CORP·Filed 1999·Granted Oct 31, 2000·99 cites·12 claims
- 0690US8785976B2Polarization super-junction low-loss gallium nitride semiconductor deviceNAKAJIMA AKIRA·Filed 2011·Granted Jul 22, 2014·28 cites·8 claims
- 0790US6239033B1Manufacturing method of semiconductor deviceSONY CORP·Filed 1999·Granted May 29, 2001·73 cites·8 claims
- 0889US6501154B2Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structureSONY CORP·Filed 1998·Granted Dec 31, 2002·79 cites·8 claims
- 0989US6121636ASemiconductor light emitting deviceSONY CORP·Filed 1998·Granted Sep 19, 2000·110 cites·18 claims
- 1085US6281032B1Manufacturing method for nitride III-V compound semiconductor device using bondingSONY CORP·Filed 1999·Granted Aug 28, 2001·61 cites·16 claims
- 1184US6235617B1Semiconductor device and its manufacturing methodSONY CORP·Filed 2000·Granted May 22, 2001·28 cites·4 claims
- 1283US5981980ASemiconductor laminating structureSONY CORP·Filed 1997·Granted Nov 9, 1999·67 cites·6 claims
- 1381US5863811AMethod for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layersSONY CORP·Filed 1996·Granted Jan 26, 1999·66 cites·12 claims
- 1479US6107162AMethod for manufacture of cleaved light emitting semiconductor deviceSONY CORP·Filed 1998·Granted Aug 22, 2000·40 cites·11 claims
- 1578US6426264B1Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor deviceSONY CORP·Filed 2000·Granted Jul 30, 2002·19 cites·17 claims
- 1676US5821568ACleaved semiconductor device with {11-20} planeSONY CORP·Filed 1996·Granted Oct 13, 1998·36 cites·8 claims
- 1773US9991335B2Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the samePOWDEC KK·Filed 2014·Granted Jun 5, 2018·5 cites·3 claims
- 1871US5753966ASemiconductor device with cleaved surfaceSONY CORP·Filed 1996·Granted May 19, 1998·34 cites·8 claims
- 1970USRE38613EMethod for growing a nitride compound semiconductorSONY CORP·Filed 2002·Granted Oct 5, 2004·10 cites·10 claims
- 2070US6750481B2Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the sameSONY CORP·Filed 2002·Granted Jun 15, 2004·11 cites·20 claims
- 2170US6413312B1Method for growing a nitride compound semiconductorSONY CORP·Filed 2000·Granted Jul 2, 2002·10 cites·9 claims
- 2270US6043140AMethod for growing a nitride compound semiconductorSONY CORP·Filed 1997·Granted Mar 28, 2000·29 cites·10 claims
- 2369US4016052AElectrodeposition processSONY CORP·Filed 1975·Granted Apr 5, 1977·14 cites·10 claims
- 2466US10014399B1Hetero-junction bipolar transistor and electric devicePOWDEC KK·Filed 2017·Granted Jul 3, 2018·1 cites·9 claims
- 2565US6111273ASemiconductor device and its manufacturing methodSONY CORP·Filed 1999·Granted Aug 29, 2000·24 cites·4 claims
- 2664US4751195AMethod of manufacturing a heterojunction bipolar transistorSONY CORP·Filed 1987·Granted Jun 14, 1988·22 cites·5 claims
- 2762US4758870ASemiconductor deviceAGENCY IND SCIENCE TECHN·Filed 1985·Granted Jul 19, 1988·21 cites·1 claims
- 2860US12446250B2Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipmentPOWDEC KK·Filed 2021·Granted Oct 14, 2025·0 cites·9 claims
- 2959US5200021AMethod and apparatus for vapor depositionSONY CORP·Filed 1988·Granted Apr 6, 1993·22 cites·13 claims
- 3056US2023352573A1Semiconductor element and deviceTOYODA GOSEI KK·Filed 2023·Application pending·0 cites
- 3155US6362016B1Semiconductor light emitting deviceSONY CORP·Filed 2000·Granted Mar 26, 2002·5 cites·1 claims
- 3253US4903104AHeterojunctional collector-top type bi-polar transistorSONY CORP·Filed 1989·Granted Feb 20, 1990·14 cites·1 claims
- 3350US4916499AJunction field effect transistor with vertical gate regionSONY CORP·Filed 1989·Granted Apr 10, 1990·12 cites·2 claims
- 3448US6903392B2Semiconductor device and its manufacturing methodSONY CORP·Filed 2001·Granted Jun 7, 2005·1 cites·4 claims
- 3548US6081001ANitride semiconductor light emitting deviceSONY CORP·Filed 1997·Granted Jun 27, 2000·12 cites·8 claims
- 3643US2022238728A1Diode, method for producing diode, and electronic devicePOWDEC KK·Filed 2020·Application pending·0 cites
- 3741US5140399AHeterojunction bipolar transistor and the manufacturing method thereofSONY CORP·Filed 1991·Granted Aug 18, 1992·8 cites·6 claims
- 3841US2005087751A1Insulating nitride layer and process for its forming, and semiconductor device and process for its productionFiled 2004·Application pending·0 cites
- 3937US5124771ASemiconductor deviceSONY CORP·Filed 1991·Granted Jun 23, 1992·6 cites·5 claims
- 4037US2002096692A1Insulating nitirde layer and process for its forming, and semiconductor device and process for its productionFiled 2001·Application pending·0 cites
- 4133US2020185930A1Electric storage module and electric storage module rapid charging systemKUWATA CO LTD·Filed 2017·Application pending·0 cites
- 4233US2012280363A1Semiconductor device and method for manufacturing thereofSUMIDA YASUNOBU·Filed 2010·Application pending·0 cites
- 4332US4252669ALuminescent material and method of making the sameSONY CORP·Filed 1979·Granted Feb 24, 1981·3 cites·5 claims
- 4429US2017263710A1Semiconductor element, electric equipment, bidirectional field effect transistor, and mounted structure bodyPOWDEC KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →