Inventor · disambiguated record
Hirotaka Kizuki
Also filed as: KIZUKI HIROTAKA
21 granted patents·1,368 citations·filing 1992–2004
97Inventor score
Files withMITSUBISHI ELECTRIC CORP21
Top patents by PatentIndex Score
21 records- 0197US5782979ASubstrate holder for MOCVDMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 21, 1998·584 cites·2 claims
- 0295US7307490B2High frequency switch deviceMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Dec 11, 2007·68 cites·6 claims
- 0395US5796127AHigh electron mobility transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 18, 1998·224 cites·4 claims
- 0488US5459747ASemiconductor optical devicesMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 17, 1995·53 cites·13 claims
- 0577US5948161AMethod of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surfaceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 7, 1999·51 cites·19 claims
- 0677US5539763ASemiconductor lasers and methods for fabricating semiconductor lasersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 23, 1996·40 cites·36 claims
- 0776US5608749ASemiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrodeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 4, 1997·34 cites·4 claims
- 0875US5991322ASemiconductor optical deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 23, 1999·37 cites·5 claims
- 0974US6358316B1Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structureMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 19, 2002·45 cites·18 claims
- 1069US5714006AMethod of growing compound semiconductor layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 3, 1998·36 cites·12 claims
- 1161US6506618B1Method of forming a GaInNAs layerMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jan 14, 2003·7 cites·16 claims
- 1261US5835516ASemiconductor laser device and method of fabricating semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 10, 1998·24 cites·28 claims
- 1361US5602414AInfrared detector having active regions and isolating regions formed of CdHgTeMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 11, 1997·26 cites·7 claims
- 1461US5426658ASemiconductor laser including ridge confining buffer layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jun 20, 1995·27 cites·3 claims
- 1558US5316967AMethod for producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 31, 1994·24 cites·13 claims
- 1657US5882952ASemiconductor device including quantum wells or quantum wires and method of making semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 16, 1999·21 cites·7 claims
- 1752US5541950ASemiconductor laser including groove having variable dimensionsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 30, 1996·17 cites·5 claims
- 1852US5389798AHigh-speed semiconductor device with graded collector barrierMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 14, 1995·14 cites·4 claims
- 1951US6096617AMethod of manufacturing a carbon-doped compound semiconductor layerMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 1, 2000·16 cites·12 claims
- 2049US5679962ASemiconductor device and a single electron deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 21, 1997·12 cites·22 claims
- 2138US5805628ASemiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 8, 1998·8 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →