Inventor · disambiguated record
Hirotoshi Kubo
Also filed as: KUBO HIROTOSHI
20 granted patents·4 pending applications·278 citations·filing 1997–2022
95Inventor score
Top patents by PatentIndex Score
24 records- 0190US7521306B2Semiconductor device and a method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Apr 21, 2009·21 cites·6 claims
- 0290US5972741AMethod of manufacturing semiconductor deviceSANYO ELECTRIC CO·Filed 1997·Granted Oct 26, 1999·108 cites·8 claims
- 0384US6395604B1Method of fabricating semiconductor deviceSANYO ELECTRIC CO·Filed 2000·Granted May 28, 2002·32 cites·1 claims
- 0479US7397128B2Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2006·Granted Jul 8, 2008·11 cites·5 claims
- 0574US6828626B2Semiconductor device with vertical transistorsSANYO ELECTRIC CO·Filed 2002·Granted Dec 7, 2004·17 cites·8 claims
- 0671US6137135ASemiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 1998·Granted Oct 24, 2000·27 cites·11 claims
- 0770US7439137B2Method for manufacturing semiconductor deviceSANYO ELECTRIC CO·Filed 2005·Granted Oct 21, 2008·4 cites·7 claims
- 0861US6429078B2Method of manufacturing insulating-gate semiconductor deviceSANYO ELECTRIC CO·Filed 2001·Granted Aug 6, 2002·10 cites·7 claims
- 0957US5970344AMethod of manufacturing semiconductor device having gate electrodes formed in trench structure before formation of source layersSANYO ELECTRIC CO·Filed 1998·Granted Oct 19, 1999·17 cites·5 claims
- 1054US6576955B2Insulated gate field effect semiconductor deviceSANYO ELECTRIC CO·Filed 2001·Granted Jun 10, 2003·6 cites·9 claims
- 1154US2023296699A1Hall sensor and manufacturing method of hall sensorROHM CO LTD·Filed 2022·Application pending·0 cites
- 1252US8076755B2Semiconductor device and method of manufacturing the sameUMEMOTO MITSUO·Filed 2008·Granted Dec 13, 2011·1 cites·7 claims
- 1352US7230300B2Semiconductor device with peripheral trenchSANYO ELECTRIC CO·Filed 2004·Granted Jun 12, 2007·6 cites·4 claims
- 1450US7629644B2Insulated gate-type semiconductor device and manufacturing method of the sameSANYO ELECTRIC CO·Filed 2004·Granted Dec 8, 2009·3 cites·7 claims
- 1548US7320916B2Manufacturing method of semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted Jan 22, 2008·4 cites·8 claims
- 1644US6967139B2Method of manufacturing semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted Nov 22, 2005·2 cites·13 claims
- 1741US2007166905A1Method of manufacturing semiconductor device with trenchSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 1837US2006054970A1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2005·Application pending·0 cites
- 1936US6818492B2Semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2001·Granted Nov 16, 2004·1 cites·9 claims
- 2035US7413954B2Insulated gate semiconductor device and manufacturing method of the sameSANYO ELECTRIC CO·Filed 2005·Granted Aug 19, 2008·0 cites·3 claims
- 2135US6939776B2Semiconductor device and a method of fabricating the sameSANYO ELECTRIC CO·Filed 2001·Granted Sep 6, 2005·0 cites·8 claims
- 2233US2002014650A1High frequency transistor deviceFiled 2001·Application pending·0 cites
- 2330US6301982B1Variable mechanism for mounting angle housed gyro-sensor and method of mounting variable mechanism for mounting angleMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 16, 2001·8 cites·14 claims
- 2429US6537899B2Semiconductor device and a method of fabricating the sameSANYO ELECTRIC CO·Filed 1998·Granted Mar 25, 2003·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →