Inventor · disambiguated record
Hisashi Minemoto
Also filed as: MINEMOTO HISASHI
47 granted patents·5 pending applications·585 citations·filing 1990–2020
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD35PANASONIC CORP5KONICA MINOLTA INC4MINEMOTO HISASHI2YAMADA OSAMU2
Top patents by PatentIndex Score
52 records- 0195US5436920ALaser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jul 25, 1995·97 cites·22 claims
- 0294US7381268B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jun 3, 2008·12 cites·38 claims
- 0392US7435295B2Method for producing compound single crystal and production apparatus for use thereinMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·11 cites·32 claims
- 0489US7754012B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitridePANASONIC CORP·Filed 2008·Granted Jul 13, 2010·6 cites·27 claims
- 0588US6542647B2Optical signal transmission system and magneto-optical modulator designed to establish modulation over wide range for use in the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 1, 2003·38 cites·37 claims
- 0686US5569565AHologram recording materialMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Oct 29, 1996·68 cites·4 claims
- 0782US7221037B2Method of manufacturing group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 22, 2007·15 cites·7 claims
- 0882US5699461AOptical fiber sensors and method for making the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 16, 1997·52 cites·44 claims
- 0980US7288152B2Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the sameYUSUKE MORI·Filed 2004·Granted Oct 30, 2007·31 cites·28 claims
- 1077US7176115B2Method of manufacturing Group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 13, 2007·19 cites·58 claims
- 1172US7227172B2Group-III-element nitride crystal semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jun 5, 2007·14 cites·20 claims
- 1271US5835257AMagneto-optical element and optical magnetic field sensor using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 10, 1998·21 cites·8 claims
- 1370US8574361B2Group-III element nitride crystal producing method and group-III element nitride crystalYAMADA OSAMU·Filed 2008·Granted Nov 5, 2013·2 cites·12 claims
- 1470US5732167AOptical fiber sensor for measuring a magnetic field or electric current and method for making the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Mar 24, 1998·32 cites·21 claims
- 1567US7309534B2Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 18, 2007·10 cites·55 claims
- 1666US6927909B2Integrated magneto-optical modulator with optical isolator, method of manufacturing the same and optical communication system using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 9, 2005·9 cites·20 claims
- 1765US8231726B2Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrateMINEMOTO HISASHI·Filed 2007·Granted Jul 31, 2012·3 cites·26 claims
- 1865US2014030549A1Group iii element nitride crystal producing method and group-iii element nitride crystalYAMADA OSAMU·Filed 2013·Application pending·0 cites
- 1964US7524691B2Method of manufacturing group III nitride substratePANASONIC CORP·Filed 2004·Granted Apr 28, 2009·8 cites·25 claims
- 2064US7125801B2Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·8 cites·29 claims
- 2162US7255742B2Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 14, 2007·4 cites·26 claims
- 2258US10610201B2Ultrasonic probe and ultrasonic diagnostic apparatusKONICA MINOLTA INC·Filed 2019·Granted Apr 7, 2020·0 cites·10 claims
- 2357US6912080B2Magneto-optic modulator and optical communication system using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 28, 2005·5 cites·40 claims
- 2457US2007187700A1Method of manufacturing group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 2556US7794539B2Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced therebyPANASONIC CORP·Filed 2005·Granted Sep 14, 2010·1 cites·16 claims
- 2653US6903862B2Ultraviolet acoustooptic device and optical imaging apparatus using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 7, 2005·4 cites·22 claims
- 2753US6404190B1Optical magnetic field sensor probeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 11, 2002·4 cites·3 claims
- 2852US9812633B2Piezoelectric composition and method for producing same, piezoelectric element/non-lead piezoelectric element and method for producing same, ultrasonic probe and diagnostic imaging deviceKONICA MINOLTA INC·Filed 2013·Granted Nov 7, 2017·0 cites·53 claims
- 2952US5691837AMagneto-optical element and optical magnetic field sensor using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Nov 25, 1997·10 cites·13 claims
- 3051US11826199B2Ultrasound probe and ultrasound diagnostic apparatusKONICA MINOLTA INC·Filed 2020·Granted Nov 28, 2023·0 cites·18 claims
- 3151US5075546AMagnetic field measurement apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Dec 24, 1991·16 cites·4 claims
- 3249US8916124B2Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the sameMINEMOTO HISASHI·Filed 2008·Granted Dec 23, 2014·0 cites·15 claims
- 3347US2010213576A1Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substratePANASONIC CORP·Filed 2008·Application pending·0 cites
- 3446US9281438B2Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystalHATAKEYAMA TAKESHI·Filed 2008·Granted Mar 8, 2016·0 cites·6 claims
- 3546US5742157AOptical fiber magnetic-field sensorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 21, 1998·12 cites·27 claims
- 3645US10490729B2Piezoelectric element, ultrasound probe and ultrasound imaging apparatusKONICA MINOLTA INC·Filed 2017·Granted Nov 26, 2019·0 cites·20 claims
- 3745US7855823B2Acoustooptic device and optical imaging apparatus using the samePANASONIC CORP·Filed 2005·Granted Dec 21, 2010·0 cites·20 claims
- 3845US7361220B2Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 22, 2008·0 cites·48 claims
- 3945US5347394ANonlinear optical materials, method of manufacturing the same, and optical wavelength converterMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Sep 13, 1994·11 cites·5 claims
- 4045US5167000AOptical wavelength converterMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Nov 24, 1992·12 cites·3 claims
- 4144US2005117198A1Ultraviolet acoustooptic device and optical imaging deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 4242US5381429ALaser device with wavelength converter using organic ionic crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jan 10, 1995·9 cites·16 claims
- 4341US6037770AOptical magnetic field sensor probe having drum lensesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Mar 14, 2000·6 cites·5 claims
- 4441US5346653ANon-linear optical material, method of manufacturing the same and optical wavelength converterMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Sep 13, 1994·8 cites·8 claims
- 4540US5154858ANonlinear optical compoundMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Oct 13, 1992·1 cites·5 claims
- 4639US6333809B1Magneto-optical elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 25, 2001·0 cites·5 claims
- 4739US6008927AOptical fiber modulator having an optical fiber having a poled portion serving as an electrooptic element and method for making sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 28, 1999·8 cites·22 claims
- 4838US6370288B1Optical magnetic field sensor probeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Apr 9, 2002·5 cites·2 claims
- 4938US2007196942A1Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the sameYUSUKE MORI·Filed 2004·Application pending·0 cites
- 5037US6215576B1Method for making a second-order nonlinear optical material, the material obtained by the method, and an optical modulation device comprising the materialMATSUHSHITA ELECTRIC IND CO LT·Filed 1998·Granted Apr 10, 2001·10 cites·19 claims
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