Inventor · disambiguated record
Hiroaki Nakaoka
Also filed as: NAKAOKA HIROAKI
25 granted patents·1 pending application·341 citations·filing 1993–2005
97Inventor score
Top patents by PatentIndex Score
26 records- 0184US8096744B2Wafer processing system, wafer processing method, and ion implantation systemOKADA KEIJI·Filed 2005·Granted Jan 17, 2012·14 cites·10 claims
- 0284US6800512B1Method of forming insulating film and method of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 5, 2004·26 cites·9 claims
- 0382US5696008ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Dec 9, 1997·44 cites·14 claims
- 0477US6770517B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 3, 2004·20 cites·3 claims
- 0577US6337500B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 8, 2002·35 cites·5 claims
- 0675US5428244ASemiconductor device having a silicon rich dielectric layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jun 27, 1995·36 cites·7 claims
- 0765US7067382B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jun 27, 2006·12 cites·11 claims
- 0862US6995415B2Semiconductor device and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 7, 2006·10 cites·11 claims
- 0961US7033874B2Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 25, 2006·6 cites·4 claims
- 1061US6217951B1Impurity introduction method and apparatus thereof and method of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 17, 2001·26 cites·26 claims
- 1158US7015554B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 21, 2006·8 cites·6 claims
- 1258US5780898ASemiconductor device with a vertical field effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 14, 1998·14 cites·1 claims
- 1358US5670810ASemiconductor device with a vertical field effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Sep 23, 1997·14 cites·11 claims
- 1456US6859023B2Evaluation method for evaluating insulating film, evaluation device therefor and method for manufacturing evaluation deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 22, 2005·5 cites·16 claims
- 1556US6831020B2Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Dec 14, 2004·7 cites·16 claims
- 1656US5851906AImpurity doping methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Dec 22, 1998·21 cites·3 claims
- 1755US6861375B1Method of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Mar 1, 2005·7 cites·7 claims
- 1855US6784080B2Method of manufacturing semiconductor device by sputter dopingMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 31, 2004·5 cites·50 claims
- 1953US6884643B2Semiconductor device, method for evaluating the same, and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 26, 2005·4 cites·9 claims
- 2049US5686340AManufacturing method of CMOS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Nov 11, 1997·7 cites·1 claims
- 2148US5447872AManufacturing method of CMOS transistor including heat treatments of gate electrodes and LDD regions at reducing temperaturesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Sep 5, 1995·7 cites·2 claims
- 2243US5726071AManufacturing method of CMOS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Mar 10, 1998·5 cites·2 claims
- 2342US5409847AManufacturing method of CMOS transistor in which heat treatment at higher temperature is done prior to heat treatment at low temperatureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 25, 1995·5 cites·4 claims
- 2438US5618748AManufacturing method of CMOS transistor with no reduction of punch-through voltageMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Apr 8, 1997·3 cites·2 claims
- 2530US5756382AManufacturing method of CMOS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted May 26, 1998·0 cites·2 claims
- 2627US2001037939A1Impurity introducing apparatus and methodHIROAKI NAKAOKA·Filed 1996·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →