Inventor · disambiguated record
Hiroshi Nambu
Also filed as: NAMBU HIROSHI
4 granted patents·6 pending applications·2 citations·filing 2012–2025
57Inventor score
Top patents by PatentIndex Score
10 records- 0181US9732435B2Group 13 nitride crystal and group 13 nitride crystal substrateHAYASHI MASAHIRO·Filed 2012·Granted Aug 15, 2017·2 cites·10 claims
- 0261US2017204534A1Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystalHAYASHI MASAHIRO·Filed 2017·Application pending·0 cites
- 0360US9863058B2Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing methodHAYASHI MASAHIRO·Filed 2015·Granted Jan 9, 2018·0 cites·13 claims
- 0453US2013065036A1Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystalHAYASHI MASAHIRO·Filed 2012·Application pending·0 cites
- 0551US2025293043A1Method of manufacturing semiconductor deviceKIOXIA CORP·Filed 2025·Application pending·0 cites
- 0651US2023274942A1Method for manufacturing semiconductor deviceKIOXIA CORP·Filed 2022·Application pending·0 cites
- 0748US9404196B2Manufacturing method of group 13 nitride crystalHAYASHI MASAHIRO·Filed 2012·Granted Aug 2, 2016·0 cites·8 claims
- 0846US2013065010A1Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing methodHAYASHI MASAHIRO·Filed 2012·Application pending·0 cites
- 0939US2013011677A1Gallium nitride crystal, group 13 nitride crystal, crystal substrate, and manufacturing method thereofRICOH CO LTD·Filed 2012·Application pending·0 cites
- 1037US9123863B2Group 13 nitride crystal and substrate thereofHAYASHI MASAHIRO·Filed 2012·Granted Sep 1, 2015·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →