Inventor · disambiguated record
Hidenori Nishihara
Also filed as: NISHIHARA HIDENORI
6 granted patents·327 citations·filing 1990–2000
87Inventor score
Technology areasH10W
Files withMITSUBISHI ELECTRIC CORP6
Top patents by PatentIndex Score
6 records- 0193US5541425ASemiconductor device having trench structureMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 30, 1996·191 cites·14 claims
- 0285US6331466B1Insulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 18, 2001·37 cites·6 claims
- 0382US6323508B1Insulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 27, 2001·28 cites·15 claims
- 0474US6107650AInsulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 22, 2000·38 cites·12 claims
- 0552US5795792AMethod of manufacturing a semiconductor device having a trench structureMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 18, 1998·17 cites·4 claims
- 0647US5016083ASubmount for semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted May 14, 1991·16 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →