Inventor · disambiguated record
Hideyuki Noshiro
Also filed as: NOSHIRO HIDEYUKI
23 granted patents·3 pending applications·223 citations·filing 1992–2020
95Inventor score
Top patents by PatentIndex Score
26 records- 0188US5874364AThin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 1996·Granted Feb 23, 1999·81 cites·19 claims
- 0281US7029984B2Method for fabricating semiconductor deviceFUJITSU LTD·Filed 2005·Granted Apr 18, 2006·8 cites·18 claims
- 0379US8227782B2Resistance change element and method of manufacturing the sameNOSHIRO HIDEYUKI·Filed 2009·Granted Jul 24, 2012·6 cites·5 claims
- 0473US8482953B2Composite resistance variable element and method for manufacturing the sameNOSHIRO HIDEYUKI·Filed 2011·Granted Jul 9, 2013·5 cites·20 claims
- 0566US8106377B2Resistance change element and method of manufacturing the sameNOSHIRO HIDEYUKI·Filed 2009·Granted Jan 31, 2012·3 cites·3 claims
- 0665US6515843B2Semiconductor capacitive deviceFUJITSU LTD·Filed 1998·Granted Feb 4, 2003·24 cites·9 claims
- 0764US5679213AMethod for patterning a metal filmFUJITSU LTD·Filed 1994·Granted Oct 21, 1997·35 cites·10 claims
- 0861US6617626B2Ferroelectric semiconductor memory device and a fabrication process thereofFUJITSU LTD·Filed 2001·Granted Sep 9, 2003·7 cites·6 claims
- 0961US6495412B1Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFUJITSU LTD·Filed 1999·Granted Dec 17, 2002·22 cites·4 claims
- 1060US8533938B2Method of manufacturing resistance change elementNOSHIRO HIDEYUKI·Filed 2009·Granted Sep 17, 2013·1 cites·4 claims
- 1153US8350244B2Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance deviceFUJITSU LTD·Filed 2010·Granted Jan 8, 2013·1 cites·20 claims
- 1253US6291291B1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2000·Granted Sep 18, 2001·5 cites·20 claims
- 1350US11328769B2Resistance change device, manufacturing method for the same, and storage apparatusFUJITSU LTD·Filed 2019·Granted May 10, 2022·0 cites·16 claims
- 1449US2009230391A1Resistance Storage Element and Method for Manufacturing the SameFUJITSU LTD·Filed 2009·Application pending·0 cites
- 1546US6777287B2Ferroelectric semiconductor memory device and a fabrication process thereofFUJITSU LTD·Filed 2003·Granted Aug 17, 2004·1 cites·14 claims
- 1646US6271077B1Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 1999·Granted Aug 7, 2001·12 cites·17 claims
- 1746US6060736ASemiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 1998·Granted May 9, 2000·8 cites·6 claims
- 1842US7038264B2Semiconductor device and method for manufacturing the sameFUJITSU LTD·Filed 2004·Granted May 2, 2006·0 cites·18 claims
- 1940US8750034B2Magnetoresistance element and semiconductor memory deviceFUJITSU LTD·Filed 2013·Granted Jun 10, 2014·0 cites·15 claims
- 2039US8102003B2Resistance memory element, method of manufacturing resistance memory element and semiconductor memory deviceYOSHIDA CHIKAKO·Filed 2009·Granted Jan 24, 2012·0 cites·2 claims
- 2139US6812041B2Method of manufacturing ferroelectric capacitor using a sintering assistance filmFUJITSU LTD·Filed 2003·Granted Nov 2, 2004·0 cites·10 claims
- 2238US9218869B2Memory deviceFUJITSU LTD·Filed 2014·Granted Dec 22, 2015·0 cites·5 claims
- 2338US2020411760A1Variable resistance element, method for manufacturing same, and storage deviceFUJITSU LTD·Filed 2020·Application pending·0 cites
- 2437US8811058B2Resistance change element, method for manufacturing the same, and semiconductor memoryNOSHIRO HIDEYUKI·Filed 2009·Granted Aug 19, 2014·0 cites·13 claims
- 2536US2014003137A1Determining device and determining methodFUJITSU LTD·Filed 2013·Application pending·0 cites
- 2634US5248663AMethod of forming oxide superconductor patternsFUJITSU LTD·Filed 1992·Granted Sep 28, 1993·4 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →