Inventor · disambiguated record
Hidekazu Oda
Also filed as: ODA HIDEKAZU
76 granted patents·10 pending applications·1,019 citations·filing 1988–2024
99Inventor score
Files withMITSUBISHI ELECTRIC CORP36RENESAS ELECTRONICS CORP33RENESAS TECH CORP14OTA KAZUNOBU1SHINOHARA HIROFUMI1
Top patents by PatentIndex Score
86 records- 0196US7470618B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Dec 30, 2008·29 cites·12 claims
- 0296US7183204B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Feb 27, 2007·24 cites·12 claims
- 0396US6518623B1Semiconductor device having a buried-channel MOS structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·136 cites·3 claims
- 0495US7531402B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS TECH CORP·Filed 2007·Granted May 12, 2009·18 cites·1 claims
- 0595US6906393B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jun 14, 2005·56 cites·6 claims
- 0694US7960281B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 14, 2011·15 cites·10 claims
- 0794US6521519B2MIS transistor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 18, 2003·75 cites·6 claims
- 0893US8372747B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 12, 2013·8 cites·17 claims
- 0993US2025098281A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1092US8809186B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 19, 2014·6 cites·5 claims
- 1192US8586475B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 19, 2013·7 cites·10 claims
- 1291US9209191B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 8, 2015·5 cites·6 claims
- 1391US6740939B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·61 cites·4 claims
- 1490US9614081B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Apr 4, 2017·3 cites·7 claims
- 1590US9412867B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 9, 2016·3 cites·6 claims
- 1690US7563663B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS TECH CORP·Filed 2007·Granted Jul 21, 2009·9 cites·1 claims
- 1789US9184053B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 10, 2015·11 cites·16 claims
- 1889US6521527B1Semiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 18, 2003·45 cites·10 claims
- 1988US9935125B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 3, 2018·6 cites·10 claims
- 2088US2024395823A1Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2186US7220637B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS TECH CORP·Filed 2002·Granted May 22, 2007·20 cites·5 claims
- 2285US5710438ASemiconductor device with a silicide layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 20, 1998·53 cites·8 claims
- 2384US6469347B1Buried-channel semiconductor device, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 22, 2002·40 cites·8 claims
- 2483US12080716B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2023·Granted Sep 3, 2024·0 cites·12 claims
- 2582US6335252B1Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 1, 2002·31 cites·18 claims
- 2681US10121705B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 6, 2018·4 cites·18 claims
- 2780US6872642B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 29, 2005·23 cites·14 claims
- 2879US12198987B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted Jan 14, 2025·0 cites·12 claims
- 2976US6300664B1Semiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 9, 2001·33 cites·14 claims
- 3075US2020227557A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 3174US9966452B2Semiconductor device having a field effect transistor formed on a silicon-on-insulator substrate and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted May 8, 2018·2 cites·19 claims
- 3274US8541272B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 24, 2013·1 cites·9 claims
- 3373US11695012B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Jul 4, 2023·0 cites·31 claims
- 3470US5801425ASemiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 1, 1998·32 cites·12 claims
- 3569US6235564B1Method of manufacturing MISFETMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 22, 2001·12 cites·17 claims
- 3668US9443870B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 13, 2016·1 cites·8 claims
- 3767US10756115B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2019·Granted Aug 25, 2020·0 cites·19 claims
- 3867US9508598B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·1 cites·6 claims
- 3967US9166041B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Oct 20, 2015·1 cites·19 claims
- 4067US6600195B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 29, 2003·11 cites·8 claims
- 4167US5950098AManufacturing method of a semiconductor device with a silicide layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 7, 1999·22 cites·6 claims
- 4266US2018069119A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 4365US9847417B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 19, 2017·0 cites·4 claims
- 4464US8987081B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 24, 2015·0 cites·9 claims
- 4564US5945710ASemiconductor device with doped contact impurity regions having particular doping levelsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 31, 1999·29 cites·7 claims
- 4663US6835610B2Method of manufacturing semiconductor device having gate electrode with expanded upper portionRENESAS TECH CORP·Filed 2003·Granted Dec 28, 2004·8 cites·11 claims
- 4763US6380036B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 30, 2002·7 cites·12 claims
- 4863US5218217ADynamic random access memory device and method of manufacturingMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jun 8, 1993·22 cites·12 claims
- 4962US8859360B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 14, 2014·0 cites·3 claims
- 5062US8642418B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 4, 2014·0 cites·8 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →