Inventor · disambiguated record
Hiroyuki Ode
Also filed as: ODE HIROYUKI
70 granted patents·20 pending applications·205 citations·filing 2006–2023
98Inventor score
Top patents by PatentIndex Score
90 records- 0195US8581318B1Enhanced non-noble electrode layers for DRAM capacitor cellINTERMOLECULAR INC·Filed 2013·Granted Nov 12, 2013·21 cites·20 claims
- 0292US9105646B2Methods for reproducible flash layer depositionINTERMOLECULAR INC·Filed 2012·Granted Aug 11, 2015·12 cites·15 claims
- 0392US8435854B1Top electrode templating for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted May 7, 2013·11 cites·21 claims
- 0488US8647960B2Anneal to minimize leakage current in DRAM capacitorDEWEERD WIM·Filed 2011·Granted Feb 11, 2014·11 cites·16 claims
- 0588US8349696B1Asymmetric MIM capacitor for DRAM devicesINTERMOLECULAR INC·Filed 2011·Granted Jan 8, 2013·9 cites·20 claims
- 0687US9012298B2Methods for reproducible flash layer depositionINTERMOLECULAR INC·Filed 2012·Granted Apr 21, 2015·7 cites·12 claims
- 0787US8530348B1Integration of non-noble DRAM electrodeMALHOTRA SANDRA G·Filed 2012·Granted Sep 10, 2013·9 cites·16 claims
- 0886US8765570B2Manufacturable high-k DRAM MIM capacitor structureMALHOTRA SANDRA·Filed 2012·Granted Jul 1, 2014·7 cites·20 claims
- 0985US8679939B2Manufacturable high-k DRAM MIM capacitor structureINTERMOLECULAR INC·Filed 2013·Granted Mar 25, 2014·6 cites·20 claims
- 1085US8546236B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Oct 1, 2013·5 cites·19 claims
- 1185US8440537B1Adsorption site blocking method for co-doping ALD filmsMALHOTRA SANDRA·Filed 2011·Granted May 14, 2013·6 cites·20 claims
- 1284US8574998B2Leakage reduction in DRAM MIM capacitorsMALHOTRA SANDRA·Filed 2011·Granted Nov 5, 2013·7 cites·15 claims
- 1383US8581319B2Semiconductor stacks including catalytic layersINTERMOLECULAR INC·Filed 2013·Granted Nov 12, 2013·4 cites·17 claims
- 1483US8415227B2High performance dielectric stack for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted Apr 9, 2013·5 cites·10 claims
- 1582US8541868B2Top electrode templating for DRAM capacitorINTERMOLECULAR INC·Filed 2012·Granted Sep 24, 2013·4 cites·21 claims
- 1681US9721961B2Semiconductor memory deviceTOSHIBA KK·Filed 2015·Granted Aug 1, 2017·4 cites·18 claims
- 1781US8722504B2Interfacial layer for DRAM capacitorDEWEERD WIM·Filed 2011·Granted May 13, 2014·6 cites·20 claims
- 1881US8652927B2Integration of non-noble DRAM electrodeINTERMOLECULAR INC·Filed 2013·Granted Feb 18, 2014·5 cites·17 claims
- 1980US8486780B2Doped electrode for dram applicationsRUI XIANGXIN·Filed 2011·Granted Jul 16, 2013·5 cites·17 claims
- 2079US8815695B2Methods to improve leakage for ZrO2 based high K MIM capacitorINTERMOLECULAR INC·Filed 2012·Granted Aug 26, 2014·4 cites·19 claims
- 2179US8476141B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Jul 2, 2013·3 cites·9 claims
- 2278US8835273B2High temperature ALD process of metal oxide for DRAM applicationsCHEN HANHONG·Filed 2012·Granted Sep 16, 2014·3 cites·18 claims
- 2378US8828836B2Method for fabricating a DRAM capacitorRAMANI KARTHIK·Filed 2011·Granted Sep 9, 2014·4 cites·8 claims
- 2478US8815677B2Method of processing MIM capacitors to reduce leakage currentCHEN HANHONG·Filed 2011·Granted Aug 26, 2014·5 cites·14 claims
- 2578US8647943B2Enhanced non-noble electrode layers for DRAM capacitor cellCHEN HANHONG·Filed 2012·Granted Feb 11, 2014·4 cites·19 claims
- 2678US8541283B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Sep 24, 2013·3 cites·20 claims
- 2776US2024237563A9Semiconductor memory deviceKIOXIA CORP·Filed 2023·Application pending·0 cites
- 2874US8829647B2High temperature ALD process for metal oxide for DRAM applicationsINTERMOLECULAR INC·Filed 2013·Granted Sep 9, 2014·2 cites·15 claims
- 2972US11889777B2Semiconductor memory deviceKIOXIA CORP·Filed 2022·Granted Jan 30, 2024·0 cites·18 claims
- 3072US8813325B2Method for fabricating a DRAM capacitorRAMANI KARTHIK·Filed 2011·Granted Aug 26, 2014·3 cites·8 claims
- 3172US8772123B2Band gap improvement in DRAM capacitorsCHEN HANHONG·Filed 2011·Granted Jul 8, 2014·2 cites·19 claims
- 3272US8574999B2Blocking layers for leakage current reduction in DRAM devicesINTERMOLECULAR INC·Filed 2013·Granted Nov 5, 2013·2 cites·20 claims
- 3371US8748325B2Method of manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2013·Granted Jun 10, 2014·4 cites·15 claims
- 3470US8912628B2Semiconductor device and method for manufacturing the sameELPIDA MEMORY INC·Filed 2012·Granted Dec 16, 2014·2 cites·20 claims
- 3569US8836002B2Method for fabricating a DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Sep 16, 2014·2 cites·9 claims
- 3668US8563392B2Method of forming an ALD materialMALHOTRA SANDRA·Filed 2011·Granted Oct 22, 2013·2 cites·15 claims
- 3767US11349073B2Semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted May 31, 2022·0 cites·16 claims
- 3867US9224878B2High work function, manufacturable top electrodeINTERMOLECULAR INC·Filed 2012·Granted Dec 29, 2015·2 cites·16 claims
- 3966US9224788B2Nonvolatile memory device and method for manufacturing sameTOSHIBA KK·Filed 2014·Granted Dec 29, 2015·3 cites·14 claims
- 4066US9178010B2Adsorption site blocking method for co-doping ALD filmsINTERMOLECULAR INC·Filed 2012·Granted Nov 3, 2015·1 cites·16 claims
- 4166US8853049B2Single-sided non-noble metal electrode hybrid MIM stack for DRAM devicesDEWEERD WIM·Filed 2011·Granted Oct 7, 2014·2 cites·20 claims
- 4265US9129850B2Semiconductor device manufacturing methodPS4 LUXCO SARL·Filed 2014·Granted Sep 8, 2015·1 cites·20 claims
- 4365US8569818B2Blocking layers for leakage current reduction in DRAM devicesINTERMOLECULAR INC·Filed 2012·Granted Oct 29, 2013·1 cites·20 claims
- 4463US9209394B2Resistance change element and method for manufacturing sameTOSHIBA KK·Filed 2014·Granted Dec 8, 2015·1 cites·14 claims
- 4563US8569819B1Doped electrodes for DRAM applicationsINTERMOLECULAR INC·Filed 2013·Granted Oct 29, 2013·1 cites·16 claims
- 4662US7592267B2Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the sameELPIDA MEMORY INC·Filed 2006·Granted Sep 22, 2009·1 cites·12 claims
- 4761US8574983B2Method for fabricating a DRAM capacitor having increased thermal and chemical stabilityRAMANI KARTHIK·Filed 2011·Granted Nov 5, 2013·1 cites·12 claims
- 4860US8847397B2High work function, manufacturable top electrodeINTERMOLECULAR INC·Filed 2013·Granted Sep 30, 2014·1 cites·20 claims
- 4959US2009223443A1Supercritical film deposition apparatusELPIDA MEMORY INC·Filed 2009·Application pending·0 cites
- 5056US2023402395A1Semiconductor deviceKIOXIA CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →