Inventor · disambiguated record
Hiromichi Ohashi
Also filed as: OHASHI HIROMICHI
46 granted patents·1 pending application·1,605 citations·filing 1980–2013
99Inventor score
Files withTOSHIBA KK33NITTO DENKO CORP4TOKYO SHIBAURA ELECTRIC CO4NAT INST OF ADVANCED IND SCIEN3OHASHI HIROMICHI2
Top patents by PatentIndex Score
47 records- 0198US6750508B2Power semiconductor switching element provided with buried electrodeTOSHIBA KK·Filed 2001·Granted Jun 15, 2004·190 cites·11 claims
- 0297US6037632ASemiconductor deviceTOSHIBA KK·Filed 1996·Granted Mar 14, 2000·293 cites·3 claims
- 0396US4672407AConductivity modulated MOSFETTOSHIBA KK·Filed 1985·Granted Jun 9, 1987·83 cites·18 claims
- 0493US6933544B2Power semiconductor deviceTOSHIBA KK·Filed 2004·Granted Aug 23, 2005·72 cites·17 claims
- 0593US4928155ALateral conductivity modulated MOSFETTOSHIBA KK·Filed 1988·Granted May 22, 1990·54 cites·6 claims
- 0692US7913734B2Method and system for laminating optical elementsNITTO DENKO CORP·Filed 2010·Granted Mar 29, 2011·11 cites·5 claims
- 0792US6153896ASemiconductor device and control method thereofTOSHIBA KK·Filed 1998·Granted Nov 28, 2000·97 cites·7 claims
- 0892US5747926AFerroelectric cold cathodeTOSHIBA KK·Filed 1996·Granted May 5, 1998·72 cites·20 claims
- 0991US6940090B2Wideband gap having a low on-resistance and having a high avalanche capabilityTOSHIBA KK·Filed 2003·Granted Sep 6, 2005·43 cites·7 claims
- 1089US7244974B2wideband gap power semiconductor device having a low on-resistance and having a high avalanche capability used for power controlTOSHIBA KK·Filed 2005·Granted Jul 17, 2007·13 cites·11 claims
- 1187US4782372ALateral conductivity modulated MOSFETTOSHIBA KK·Filed 1987·Granted Nov 1, 1988·33 cites·4 claims
- 1285US7531871B2Power semiconductor switching elementTOSHIBA KK·Filed 2005·Granted May 12, 2009·8 cites·8 claims
- 1384US9570436B2Semiconductor deviceNAT INST ADVANCED IND SCIENCE & TECH·Filed 2013·Granted Feb 14, 2017·6 cites·19 claims
- 1484US6057636AMicro power switch using a cold cathode and a driving method thereofTOSHIBA KK·Filed 1997·Granted May 2, 2000·42 cites·30 claims
- 1582US7238576B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jul 3, 2007·30 cites·23 claims
- 1680US7922843B2Method and system for laminating optical elementsNITTO DENKO CORP·Filed 2009·Granted Apr 12, 2011·9 cites·14 claims
- 1780US5093701AConductivity modulated mosfetTOSHIBA KK·Filed 1988·Granted Mar 3, 1992·22 cites·5 claims
- 1880US4738935AMethod of manufacturing compound semiconductor apparatusTOSHIBA KK·Filed 1985·Granted Apr 19, 1988·53 cites·11 claims
- 1979US4368481ALight-driven semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jan 11, 1983·57 cites·16 claims
- 2077US7908026B2Apparatus for testing defects of sheet-shaped product having optical film, apparatus for processing test data thereof, apparatus for cutting the same, and production thereofNITTO DENKO CORP·Filed 2007·Granted Mar 15, 2011·4 cites·3 claims
- 2175US8149376B2Test data processing apparatus and test data processing methodOHASHI HIROMICHI·Filed 2007·Granted Apr 3, 2012·5 cites·11 claims
- 2275US4717940AMIS controlled gate turn-off thyristorTOSHIBA KK·Filed 1987·Granted Jan 5, 1988·32 cites·11 claims
- 2374US6534998B1Semiconductor device and control method thereofTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·16 cites·4 claims
- 2474US6323717B1Semiconductor device, drive method, and drive apparatusTOSHIBA KK·Filed 1999·Granted Nov 27, 2001·46 cites·21 claims
- 2573US7067870B2Power semiconductor switching elementTOSHIBA KK·Filed 2004·Granted Jun 27, 2006·12 cites·13 claims
- 2673US5714775APower semiconductor deviceTOSHIBA KK·Filed 1996·Granted Feb 3, 1998·36 cites·22 claims
- 2772US8045151B2Laminated film defect inspection method and laminated film defect inspection deviceNITTO DENKO CORP·Filed 2008·Granted Oct 25, 2011·4 cites·13 claims
- 2871US4881120AConductive modulated MOSFETTOSHIBA KK·Filed 1987·Granted Nov 14, 1989·16 cites·13 claims
- 2971US4689647AConductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrationsTOSHIBA KK·Filed 1986·Granted Aug 25, 1987·39 cites·8 claims
- 3070US5977693AMicro-vacuum deviceTOSHIBA KK·Filed 1995·Granted Nov 2, 1999·22 cites·28 claims
- 3170US5086323AConductivity modulated mosfetTOSHIBA KK·Filed 1991·Granted Feb 4, 1992·18 cites·11 claims
- 3269US8078307B2Apparatus for testing defects of sheet-shaped product having optical film, apparatus for processing test data thereof, apparatus for cutting the same, and production thereofOHASHI HIROMICHI·Filed 2010·Granted Dec 13, 2011·1 cites·6 claims
- 3366US6025622AConductivity modulated MOSFETTOSHIBA KK·Filed 1998·Granted Feb 15, 2000·14 cites·9 claims
- 3466US5286984AConductivity modulated MOSFETTOSHIBA KK·Filed 1991·Granted Feb 15, 1994·27 cites·11 claims
- 3564US7102179B2Power semiconductor device used for power controlTOSHIBA KK·Filed 2004·Granted Sep 5, 2006·8 cites·4 claims
- 3661US8351224B2Power conversion apparatusNAT INST OF ADVANCED IND SCIEN·Filed 2009·Granted Jan 8, 2013·7 cites·3 claims
- 3761US4700466AMethod of manufacturing semiconductor device wherein silicon substrates are bonded togetherTOSHIBA KK·Filed 1986·Granted Oct 20, 1987·27 cites·10 claims
- 3857US4791470AReverse conducting gate turn-off thyristor deviceTOSHIBA KK·Filed 1987·Granted Dec 13, 1988·17 cites·7 claims
- 3956US5006921APower semiconductor switching apparatus with heat sinksTOSHIBA KK·Filed 1989·Granted Apr 9, 1991·25 cites·77 claims
- 4055US5028974ASemiconductor switching device with anode shortening structureTOSHIBA KK·Filed 1990·Granted Jul 2, 1991·19 cites·21 claims
- 4147US8363441B2Power conversion apparatus with M conversion levels having an individual drive unit that does not require a dedicated power supplyNAT INST OF ADVANCED IND SCIEN·Filed 2009·Granted Jan 29, 2013·3 cites·8 claims
- 4239US2015249403A1Multilevel Power Conversion Circuit and DeviceNAT INST OF ADVANCED IND SCIEN·Filed 2013·Application pending·0 cites
- 4338US5780887AConductivity modulated MOSFETTOSHIBA KK·Filed 1994·Granted Jul 14, 1998·3 cites·4 claims
- 4436US4649410ARadiation controllable thyristor with multiple non-concentric amplified stagesTOKYO SHIBAURA ELECTRIC CO·Filed 1985·Granted Mar 10, 1987·5 cites·4 claims
- 4536US4595939ARadiation-controllable thyristor with multiple, non-concentric amplified stagesTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jun 17, 1986·5 cites·17 claims
- 4635US5212396AConductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrationsTOSHIBA KK·Filed 1991·Granted May 18, 1993·6 cites·23 claims
- 4726US4546369ALight-activated amplified gate bi-directional thyristorTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Oct 8, 1985·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →