Inventor · disambiguated record
Hiroshi Ohji
Also filed as: OHJI HIROSHI
7 granted patents·4 pending applications·149 citations·filing 1993–2006
87Inventor score
Top patents by PatentIndex Score
11 records- 0187US6393919B1Pressure sensor with a thermal pressure detecting elementMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 28, 2002·35 cites·17 claims
- 0280US6358861B1Manufacturing method of silicon deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 19, 2002·27 cites·18 claims
- 0377US5337274ANonvolatile semiconductor memory device having adjacent memory cells and peripheral transistors separated by field oxideROHM CO LTD·Filed 1993·Granted Aug 9, 1994·45 cites·1 claims
- 0472US6790340B1Method and apparatus for radiation assisted electrochemical etching and etched productMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 14, 2004·17 cites·16 claims
- 0558US6619130B1Pressure sensorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 16, 2003·9 cites·3 claims
- 0653US6591683B1Pressure sensorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 15, 2003·7 cites·3 claims
- 0752US5750251AMultilayered soft magnetic film and magnetic head using the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 12, 1998·9 cites·23 claims
- 0844US2006138518A1Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereofSHARP KK·Filed 2006·Application pending·0 cites
- 0938US2005045938A1Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereofSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
- 1035US2002079490A1Structure, method of manufacturing the structure, and DNA separation device using the structureMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 1134US2001054316A1Method of manufacturing inertial force sensorFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →