Inventor · disambiguated record
Hideo Ohno
Also filed as: OHNO HIDEO
83 granted patents·8 pending applications·13,724 citations·filing 1978–2023
99Inventor score
Top patents by PatentIndex Score
91 records- 0198US7064346B2Transistor and semiconductor deviceJAPAN SCIENCE & TECH AGENCY·Filed 2004·Granted Jun 20, 2006·4.2k cites·24 claims
- 0298US6727522B1Transistor and semiconductor deviceJAPAN SCIENCE & TECH CORP·Filed 1999·Granted Apr 27, 2004·4.4k cites·44 claims
- 0398US6563174B2Thin film transistor and matrix display deviceSHARP KK·Filed 2002·Granted May 13, 2003·4.3k cites·24 claims
- 0497US8093589B2Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic deviceSUGIHARA TOSHINORI·Filed 2004·Granted Jan 10, 2012·156 cites·31 claims
- 0594US6878962B1Semiconductor deviceJAPAN SCIENCE & TECH CORP·Filed 2000·Granted Apr 12, 2005·98 cites·13 claims
- 0691US10020039B2Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording methodNEC CORP·Filed 2016·Granted Jul 10, 2018·10 cites·17 claims
- 0791US7205640B2Semiconductor device and display comprising sameSHARP KK·Filed 2003·Granted Apr 17, 2007·64 cites·13 claims
- 0889US9478309B2Magnetic-domain-wall-displacement memory cell and initializing method thereforNEC CORP·Filed 2013·Granted Oct 25, 2016·12 cites·17 claims
- 0989US9466363B2Integrated circuitUNIV TOHOKU·Filed 2012·Granted Oct 11, 2016·9 cites·26 claims
- 1089US6703645B2Spin filterUNIV TOHOKU·Filed 2002·Granted Mar 9, 2004·45 cites·17 claims
- 1187US6556241B1Remote-controlled camera-picture broadcast systemNEC CORP·Filed 1998·Granted Apr 29, 2003·164 cites·7 claims
- 1285US8917541B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Dec 23, 2014·7 cites·34 claims
- 1385US8173487B2Semiconductor element, method for manufacturing same, and electronic device including sameURAYAMA MASAO·Filed 2008·Granted May 8, 2012·17 cites·2 claims
- 1483US5079601AOptoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctionsIBM·Filed 1989·Granted Jan 7, 1992·47 cites·42 claims
- 1582US9941468B2Magnetoresistance effect element and magnetic memory deviceUNIV TOHOKU·Filed 2015·Granted Apr 10, 2018·9 cites·13 claims
- 1679US9564152B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2014·Granted Feb 7, 2017·4 cites·15 claims
- 1778US10164174B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Dec 25, 2018·1 cites·25 claims
- 1874US9202545B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2013·Granted Dec 1, 2015·5 cites·12 claims
- 1974US7468542B2Magnetoresistive device and nonvolatile magnetic memory equipped with the sameHITACHI LTD·Filed 2006·Granted Dec 23, 2008·5 cites·17 claims
- 2073US9153306B2Tunnel magnetoresistive effect element and random access memory using sameOHNO HIDEO·Filed 2011·Granted Oct 6, 2015·5 cites·15 claims
- 2173US7759750B2Magnetic memory cell and random access memoryHITACHI LTD·Filed 2007·Granted Jul 20, 2010·4 cites·5 claims
- 2273US6476411B1Intersubband light emitting elementUNIV TOHOKU·Filed 2000·Granted Nov 5, 2002·27 cites·12 claims
- 2373US4253061ALight converting type detectorsETO GORO·Filed 1978·Granted Feb 24, 1981·31 cites·18 claims
- 2472US10749107B2Method of manufacturing magnetic tunnel coupling elementUNIV TOHOKU·Filed 2017·Granted Aug 18, 2020·1 cites·5 claims
- 2572US9135973B2Magnetoresistance effect element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 15, 2015·5 cites·19 claims
- 2671US9450177B2Magnetoresistive element and magnetic memoryOHNO HIDEO·Filed 2011·Granted Sep 20, 2016·4 cites·13 claims
- 2771US8993351B2Method of manufacturing tunneling magnetoresistive elementYAMAMOTO HIROKI·Filed 2011·Granted Mar 31, 2015·2 cites·7 claims
- 2871US6482729B2Method of generating spin-polarized conduction electron and semiconductor deviceUNIV TOHOKU·Filed 2001·Granted Nov 19, 2002·17 cites·7 claims
- 2970US11690299B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Jun 27, 2023·1 cites·9 claims
- 3070US10998491B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2019·Granted May 4, 2021·1 cites·19 claims
- 3170US10804457B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Oct 13, 2020·1 cites·20 claims
- 3270US8274818B2Magnetoresistive element, magnetic memory cell and magnetic random access memory using the sameOHNO HIDEO·Filed 2008·Granted Sep 25, 2012·7 cites·24 claims
- 3369US12131764B2Device, sensor node, access controller, data transfer method, and processing method in microcontrollerUNIV TOHOKU·Filed 2023·Granted Oct 29, 2024·0 cites·6 claims
- 3469US5294287AClass of magnetic materials for solid state devicesIBM·Filed 1991·Granted Mar 15, 1994·26 cites·15 claims
- 3567US11081641B2Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect elementUNIV TOHOKU·Filed 2017·Granted Aug 3, 2021·1 cites·23 claims
- 3666US9536584B2Nonvolatile logic gate deviceNEC CORP·Filed 2013·Granted Jan 3, 2017·3 cites·20 claims
- 3765US11563169B2Magnetic tunnel junction element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Jan 24, 2023·2 cites·11 claims
- 3865US10658572B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted May 19, 2020·0 cites·14 claims
- 3965US10586580B2Magnetic tunnel junction element and magnetic memoryUNIV TOHOKU·Filed 2017·Granted Mar 10, 2020·2 cites·8 claims
- 4063US9042165B2Magnetoresistive effect element, magnetic memory cell using same, and random access memoryIKEDA SHOJI·Filed 2011·Granted May 26, 2015·1 cites·8 claims
- 4161US11121310B2Spin electronics element and method of manufacturing thereofUNIV TOHOKU·Filed 2019·Granted Sep 14, 2021·0 cites·16 claims
- 4261US10424725B2Spintronics elementUNIV TOHOKU·Filed 2018·Granted Sep 24, 2019·0 cites·11 claims
- 4361US9928906B2Data-write device for resistance-change memory elementUNIV TOHOKU·Filed 2015·Granted Mar 27, 2018·2 cites·7 claims
- 4461US7894244B2Tunnel magnetic resistance device, and magnetic memory cell and magnetic random access memory using the sameHITACHI LTD·Filed 2007·Granted Feb 22, 2011·2 cites·12 claims
- 4560US11600313B2Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unitUNIV TOHOKU·Filed 2021·Granted Mar 7, 2023·0 cites·8 claims
- 4660US9299435B2Nonvolatile content addressable memory and method for operating sameNEC CORP·Filed 2013·Granted Mar 29, 2016·2 cites·18 claims
- 4759US11862217B2Device, sensor node, access controller, data transfer method, and processing method in microcontrollerUNIV TOHOKU·Filed 2020·Granted Jan 2, 2024·0 cites·25 claims
- 4858US9070457B2Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memoryOHNO HIDEO·Filed 2012·Granted Jun 30, 2015·2 cites·12 claims
- 4956US8837209B2Magnetic memory cell and magnetic random access memoryOHNO HIDEO·Filed 2011·Granted Sep 16, 2014·2 cites·20 claims
- 5056US6812483B2Optical semiconductor element utilizing optical transition between ZnO heterostructure sub-bandsJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted Nov 2, 2004·8 cites·8 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →