Inventor · disambiguated record
Hisashi Ohtsuka
Also filed as: OHTSUKA HISASHI
31 granted patents·12 pending applications·167 citations·filing 1994–2013
96Inventor score
Top patents by PatentIndex Score
43 records- 0186US5446750ALaser diode pumped solid laserFUJI PHOTO FILM CO LTD·Filed 1994·Granted Aug 29, 1995·55 cites·5 claims
- 0283US7579588B2Base plate for use in mass spectrometry analysis, and method and apparatus for mass spectrometry analysisFUJIFILM CORP·Filed 2006·Granted Aug 25, 2009·6 cites·8 claims
- 0382US7738107B2Surface plasmon enhanced fluorescence sensor and fluorescence detecting methodFUJIFILM CORP·Filed 2007·Granted Jun 15, 2010·8 cites·12 claims
- 0480US6791691B2Measuring method and apparatus using attenuation in total internal reflectionFUJI PHOTO FILM CO LTD·Filed 2002·Granted Sep 14, 2004·16 cites·17 claims
- 0578US6816532B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of ho3+, sm3+, eu3+, dy3+, er3+, and tb3+is excited with gan-based compound laser diodeFUJI PHOTO FILM CO LTD·Filed 2002·Granted Nov 9, 2004·8 cites·18 claims
- 0677US7330263B2Measurement method and apparatusFUJIFILM CORP·Filed 2005·Granted Feb 12, 2008·5 cites·6 claims
- 0775US7682566B2Sensor unit for assay in utilizing attenuated total reflectionFUJIFILM CORP·Filed 2006·Granted Mar 23, 2010·4 cites·3 claims
- 0874US7102754B2Measuring method and apparatus using attenuation in total internal reflectionFUJI PHOTO FILM CO LTD·Filed 2004·Granted Sep 5, 2006·10 cites·12 claims
- 0973US7715012B2Sensor unit and assay method of assay in utilizing attenuated total reflectionFUJIFILM CORP·Filed 2009·Granted May 11, 2010·3 cites·2 claims
- 1073US7515270B2Sensor unit and assay method of assay in utilizing attenuated total reflectionFUJIFILM CORP·Filed 2006·Granted Apr 7, 2009·3 cites·14 claims
- 1173US7413911B2Method for measuring reaction rate coefficient by surface plasmon resonance analysisFUJIFILM CORP·Filed 2005·Granted Aug 19, 2008·3 cites·6 claims
- 1272US8106368B2Fluorescence detecting methodOHTSUKA HISASHI·Filed 2009·Granted Jan 31, 2012·4 cites·14 claims
- 1370US8278626B2Device for mass spectrometry, and mass spectrometry apparatus and methodMURAKAMI NAOKI·Filed 2009·Granted Oct 2, 2012·2 cites·12 claims
- 1467US7154930B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diodeFUJI PHOTO FILM CO LTD·Filed 2004·Granted Dec 26, 2006·4 cites·12 claims
- 1565US8039267B2Detection method, detection apparatus, and sample cell and kit for detectionFUJIFILM CORP·Filed 2009·Granted Oct 18, 2011·1 cites·6 claims
- 1665US7365853B2Measuring method and measuring apparatus utilizing attenuated total reflectionFUJIFILM CORP·Filed 2005·Granted Apr 29, 2008·1 cites·11 claims
- 1764US7439078B2Method for measuring dissociation rate coefficient by surface plasmon resonance analysisFUJIFILM CORP·Filed 2005·Granted Oct 21, 2008·1 cites·2 claims
- 1855US6058126ALaser-diode-pumped solid state laser and radiation image read-out systemFUJI PHOTO FILM CO LTD·Filed 1998·Granted May 2, 2000·18 cites·5 claims
- 1954US8039268B2Immunochromatoassay method and immunochromatoassay kitFUJIFILM CORP·Filed 2009·Granted Oct 18, 2011·0 cites·6 claims
- 2052US7356065B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diodeFUJIFILM CORP·Filed 2004·Granted Apr 8, 2008·1 cites·20 claims
- 2152US2010006774A1Detection method, detection apparatus, and sample cell and kit for detectionFUJIFILM CORP·Filed 2009·Application pending·0 cites
- 2252US2009321661A1Detecting method, detection sample cell, and detecting kitFUJIFILM CORP·Filed 2009·Application pending·0 cites
- 2352US2010047820A1Detecting method, detecting apparatus, detection sample cell, and detecting kitFUJIFILM CORP·Filed 2009·Application pending·0 cites
- 2452US2009321662A1Detection method, detection apparatus, and sample cell and kit for detectionFUJIFILM CORP·Filed 2009·Application pending·0 cites
- 2551US7701579B2Fluorescence sensorFUJIFILM CORP·Filed 2008·Granted Apr 20, 2010·0 cites·9 claims
- 2651US6795475B1Solid-state laser apparatus excited by laser light from semiconductor laser unit having increased resonator lengthFUJI PHOTO FILM CO LTD·Filed 2000·Granted Sep 21, 2004·2 cites·18 claims
- 2751US2009101815A1Cantilever for near field optical microscopes, plasmon enhanced fluorescence microscope employing the cantilever, and fluorescence detecting methodFUJIFILM CORP·Filed 2008·Application pending·0 cites
- 2851US2011129942A1Fluorescence detecting methodFUJIFILM CORP·Filed 2008·Application pending·0 cites
- 2950US2008219893A1Local plasmon enhanced fluorescence sensorFUJIFILM CORP·Filed 2008·Application pending·0 cites
- 3049US2008179540A1Surface plasmon enhanced fluorescence sensorFUJIFILM CORP·Filed 2007·Application pending·0 cites
- 3149US2005112028A1Surface plasmon resonance sensor and sensor unitFUJI PHOTO FILM CO LTD·Filed 2004·Application pending·0 cites
- 3248US7885769B2Screening method and apparatusFUJIFILM CORP·Filed 2007·Granted Feb 8, 2011·0 cites·10 claims
- 3348US2014030821A1Localized plasmon enhancing fluorescence particles, localized plasmon enhanced fluorescence detecting carrier, localized plasmon enhanced fluorescence detecting apparatus, and fluorescence detecting methodFUJIFILM CORP·Filed 2013·Application pending·0 cites
- 3447US7418023B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, SM3+, EU3+, DY3+, ER3+ and TB3+ is excited with GaN-based compound laser diodeFUJIFILM CORP·Filed 2004·Granted Aug 26, 2008·0 cites·9 claims
- 3547US7411990B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diodeFUJIFILM CORP·Filed 2004·Granted Aug 12, 2008·0 cites·12 claims
- 3647US7403554B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diodeFUJIFILM CORP·Filed 2004·Granted Jul 22, 2008·0 cites·20 claims
- 3747US7362789B2Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diodeFUJIFILM CORP·Filed 2004·Granted Apr 22, 2008·0 cites·20 claims
- 3844US2009101836A1Fluorescence sensor and method for producing thin metal film with apertures to be used by the fluorescence sensorFUJIFILM CORP·Filed 2008·Application pending·0 cites
- 3941US2012322166A1Fluorescence detecting apparatus, sample cell for detecting fluorescence, and fluorescence detecting methodOHTSUKA HISASHI·Filed 2012·Application pending·0 cites
- 4039US8456158B2Detecting method and dielectric particles containing magnetic material employed in the detecting methodOHTSUKA HISASHI·Filed 2010·Granted Jun 4, 2013·0 cites·18 claims
- 4136US6341139B1Semiconductor-laser-pumped solid state laserFUJI PHOTO FILM CO LTD·Filed 1999·Granted Jan 22, 2002·6 cites·20 claims
- 4236US6049555ALaser-diode-pumped solid state laserFUJI PHOTO FILM CO LTD·Filed 1998·Granted Apr 11, 2000·6 cites·4 claims
- 4330US6314120B1Semiconductor laser pumped solid state laserFUJI PHOTO FILM CO LTD·Filed 1999·Granted Nov 6, 2001·0 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Hisashi Ohtsuka files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →