Inventor · disambiguated record
Hirokazu Oikawa
Also filed as: OIKAWA HIROKAZU
7 granted patents·1 pending application·270 citations·filing 1994–2007
88Inventor score
Top patents by PatentIndex Score
8 records- 0192US6627473B1Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereofNEC COMPOUND SEMICONDUCTOR·Filed 2000·Granted Sep 30, 2003·133 cites·22 claims
- 0291US7834461B2Semiconductor apparatusNEC ELECTRONICS CORP·Filed 2007·Granted Nov 16, 2010·32 cites·14 claims
- 0371US6159861AMethod of manufacturing semiconductor deviceNEC CORP·Filed 1998·Granted Dec 12, 2000·33 cites·29 claims
- 0469US6078067ASemiconductor device having mutually different two gate threshold voltagesNEC CORP·Filed 1997·Granted Jun 20, 2000·33 cites·4 claims
- 0564US5432126AFabrication process of compound semiconductor device comprising L-shaped gate electrodeNEC CORP·Filed 1994·Granted Jul 11, 1995·27 cites·12 claims
- 0652US6514872B1Method of manufacturing a semiconductor deviceNEC COMPOUND SEMICONDUCTOR·Filed 2000·Granted Feb 4, 2003·6 cites·15 claims
- 0735US5922623AHydrogen fluoride vapor phase selective etching method for fabricating semiconductor devicesNEC CORP·Filed 1996·Granted Jul 13, 1999·6 cites·18 claims
- 0833US2002187623A1Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereofNEC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →