Inventor · disambiguated record
Hirokazu Sayama
Also filed as: SAYAMA HIROKAZU
48 granted patents·7 pending applications·739 citations·filing 1997–2024
98Inventor score
Files withRENESAS ELECTRONICS CORP26RENESAS TECH CORP15MITSUBISHI ELECTRIC CORP11OTA KAZUNOBU1SAYAMA HIROKAZU1
Top patents by PatentIndex Score
55 records- 0196US7470618B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Dec 30, 2008·29 cites·12 claims
- 0296US7183204B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Feb 27, 2007·24 cites·12 claims
- 0395US7531402B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS TECH CORP·Filed 2007·Granted May 12, 2009·18 cites·1 claims
- 0495US6906393B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jun 14, 2005·56 cites·6 claims
- 0594US7960281B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 14, 2011·15 cites·10 claims
- 0693US8372747B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 12, 2013·8 cites·17 claims
- 0793US2025098281A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0892US8809186B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 19, 2014·6 cites·5 claims
- 0992US8586475B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 19, 2013·7 cites·10 claims
- 1091US9209191B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 8, 2015·5 cites·6 claims
- 1191US6740939B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·61 cites·4 claims
- 1291US5889335ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 30, 1999·105 cites·7 claims
- 1390US9614081B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Apr 4, 2017·3 cites·7 claims
- 1490US9412867B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 9, 2016·3 cites·6 claims
- 1590US7563663B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS TECH CORP·Filed 2007·Granted Jul 21, 2009·9 cites·1 claims
- 1686US7220637B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS TECH CORP·Filed 2002·Granted May 22, 2007·20 cites·5 claims
- 1784US6218262B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 17, 2001·62 cites·6 claims
- 1882US6335252B1Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 1, 2002·31 cites·18 claims
- 1982US5744845AComplementary MOS field effect transistor with tunnel effect meansMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 28, 1998·53 cites·4 claims
- 2080US6872642B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 29, 2005·23 cites·14 claims
- 2180US6281558B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 28, 2001·48 cites·8 claims
- 2279US12198987B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted Jan 14, 2025·0 cites·12 claims
- 2378US11502036B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Nov 15, 2022·1 cites·15 claims
- 2475US2020227557A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 2574US8541272B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 24, 2013·1 cites·9 claims
- 2672US7109553B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2004·Granted Sep 19, 2006·14 cites·3 claims
- 2770US6806537B2Semiconductor device having offset insulation film formed on insulation film, and method of manufacturing the sameRENESAS TECH CORP·Filed 2002·Granted Oct 19, 2004·13 cites·4 claims
- 2868US11798886B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2022·Granted Oct 24, 2023·0 cites·12 claims
- 2967US6600180B1Semiconductor device, method of manufacturing the same and exposure mask for implantationMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 29, 2003·18 cites·9 claims
- 3067US6600195B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 29, 2003·11 cites·8 claims
- 3166US2018069119A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 3265US9847417B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 19, 2017·0 cites·4 claims
- 3365US6344388B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 5, 2002·24 cites·16 claims
- 3464US8987081B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 24, 2015·0 cites·9 claims
- 3564US6232187B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 15, 2001·27 cites·8 claims
- 3663US9129841B2Semiconductor device including a high voltage P-channel transistor and method for manufacturing the sameSAYAMA HIROKAZU·Filed 2011·Granted Sep 8, 2015·2 cites·10 claims
- 3763US6835610B2Method of manufacturing semiconductor device having gate electrode with expanded upper portionRENESAS TECH CORP·Filed 2003·Granted Dec 28, 2004·8 cites·11 claims
- 3862US8859360B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 14, 2014·0 cites·3 claims
- 3962US8642418B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 4, 2014·0 cites·8 claims
- 4062US7998802B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2009·Granted Aug 16, 2011·0 cites·2 claims
- 4162US7015107B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Mar 21, 2006·10 cites·10 claims
- 4261US9349816B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2015·Granted May 24, 2016·0 cites·14 claims
- 4361US9214464B2Method of manufacturing semiconductor device with offset sidewall structureRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 15, 2015·0 cites·20 claims
- 4458US12288760B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2022·Granted Apr 29, 2025·0 cites·10 claims
- 4554US9112013B2Semiconductor device and method for producing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 18, 2015·0 cites·14 claims
- 4653US8415213B2Method of manufacturing semiconductor device with offset sidewall structureOTA KAZUNOBU·Filed 2011·Granted Apr 9, 2013·0 cites·19 claims
- 4752US6670277B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Dec 30, 2003·3 cites·17 claims
- 4850US6506651B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 14, 2003·2 cites·15 claims
- 4950US6017800ASemiconductor device and method of fabricating thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 25, 2000·16 cites·4 claims
- 5049US2006273394A1Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →