Inventor · disambiguated record
Hiromu Shiomi
Also filed as: SHIOMI HIROMU
51 granted patents·17 pending applications·1,381 citations·filing 1989–2022
98Inventor score
Top patents by PatentIndex Score
68 records- 0197US6734461B1SiC wafer, SiC semiconductor device, and production method of SiC waferSIXON INC·Filed 2000·Granted May 11, 2004·479 cites·13 claims
- 0292US7998836B1Method for fabricating gallium nitride based semiconductor electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Aug 16, 2011·16 cites·20 claims
- 0390US4982243ASchottky contactSUMITOMO ELECTRIC INDUSTRIES·Filed 1989·Granted Jan 1, 1991·62 cites·6 claims
- 0488US5387310AMethod for producing single crystal diamond filmSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Feb 7, 1995·52 cites·4 claims
- 0587US9954054B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Apr 24, 2018·5 cites·25 claims
- 0686US5844252AField emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Dec 1, 1998·49 cites·8 claims
- 0786US5729074AMicro mechanical component and production process thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Mar 17, 1998·53 cites·4 claims
- 0885US6136093AMethod of making GaN single crystal and apparatus for making GaN single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Oct 24, 2000·51 cites·10 claims
- 0984US10424642B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Sep 24, 2019·4 cites·8 claims
- 1082US6660084B1Sic single crystal and method for growing the sameSIXON INC·Filed 2000·Granted Dec 9, 2003·20 cites·7 claims
- 1181US8013343B2Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Sep 6, 2011·3 cites·5 claims
- 1280US10707299B2Silicon carbide semiconductor device, and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jul 7, 2020·3 cites·7 claims
- 1380US6132550AApparatuses for desposition or etchingSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Oct 17, 2000·53 cites·22 claims
- 1480US5132749ASemiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted Jul 21, 1992·56 cites·13 claims
- 1578US6391109B2Method of making SiC single crystal and apparatus for making SiC single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted May 21, 2002·13 cites·13 claims
- 1677US5874775ADiamond heat sink including microchannel therein and methods for manufacturing diamond heat sinksSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Feb 23, 1999·52 cites·6 claims
- 1776US6184611B1Electron-emitting elementSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Feb 6, 2001·24 cites·10 claims
- 1875US5400738AMethod for producing single crystal diamond filmSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Mar 28, 1995·25 cites·4 claims
- 1974US8349078B2Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 8, 2013·3 cites·35 claims
- 2074US6193797B1Method of making SiC single crystal and apparatus for making SiC single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Feb 27, 2001·30 cites·9 claims
- 2173US5903015AField effect transistor using diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted May 11, 1999·34 cites·6 claims
- 2272US11233125B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jan 25, 2022·1 cites·6 claims
- 2371US8502310B2III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial waferSHIOMI HIROMU·Filed 2009·Granted Aug 6, 2013·5 cites·20 claims
- 2471US5812573ASemiconductor lasers comprising rare earth metal-doped diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Sep 22, 1998·33 cites·14 claims
- 2570US8883619B2Method for manufacturing semiconductor deviceTAMASO HIDETO·Filed 2011·Granted Nov 11, 2014·2 cites·10 claims
- 2669US12125881B2Silicon carbide epitaxial substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Oct 22, 2024·1 cites·14 claims
- 2769US10062750B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Aug 28, 2018·1 cites·4 claims
- 2868US10453952B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 22, 2019·1 cites·4 claims
- 2967US5663595ADiamond heat sink comprising synthetic diamond filmSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Sep 2, 1997·29 cites·12 claims
- 3067US5252840ASemiconductor device having differently doped diamond layersSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted Oct 12, 1993·39 cites·21 claims
- 3166US5243199AHigh frequency deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Sep 7, 1993·35 cites·4 claims
- 3265US8877656B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Nov 4, 2014·1 cites·5 claims
- 3365US5976909AMethod of forming diamond heat sink comprising synthetic diamond filmSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Nov 2, 1999·27 cites·7 claims
- 3459US2024068125A1Sic single-crystal growth apparatus and method of growing sic crystalSEC CARBON LTD·Filed 2022·Application pending·0 cites
- 3559US2024295047A1Sic single-crystal growth apparatusSEC CARBON LTD·Filed 2022·Application pending·0 cites
- 3658US8642436B2Method of manufacturing silicon carbide semiconductor deviceOOI NAOKI·Filed 2011·Granted Feb 4, 2014·1 cites·15 claims
- 3757US8609521B2Method of manufacturing semiconductor deviceKUBOTA RYOSUKE·Filed 2011·Granted Dec 17, 2013·1 cites·9 claims
- 3856US5818148AElectromechanical switchSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Oct 6, 1998·14 cites·17 claims
- 3953US6270898B1Tool tip and bonding tool comprising the tool tip and control method for the bonding toolSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Aug 7, 2001·18 cites·24 claims
- 4053US6267637B1Electron-emitting element, method of making the same, and electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jul 31, 2001·8 cites·27 claims
- 4153US5242663AMethod of and apparatus for synthesizing hard materialSUMITOMO ELECTRIC INDUSTRIES·Filed 1990·Granted Sep 7, 1993·13 cites·13 claims
- 4253US5162886AHall deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted Nov 10, 1992·14 cites·10 claims
- 4353US2018286979A1Method for manufacturing a silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Application pending·0 cites
- 4450US9082683B2Method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jul 14, 2015·0 cites·15 claims
- 4548US6007730AMethod of manufacturing diamond heat sinkSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Dec 28, 1999·14 cites·16 claims
- 4648US5943555AMicro mechanical component and production process thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Aug 24, 1999·10 cites·7 claims
- 4748US2007221119A1Method of Sic Single Crystal Growth and Sic Single CrystalSIXON LTD·Filed 2005·Application pending·0 cites
- 4847US2017133504A1Silicon carbide semiconductor device, and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 4946US8785301B2Method of cleaning silicon carbide semiconductorWADA KEIJI·Filed 2011·Granted Jul 22, 2014·0 cites·7 claims
- 5046US5500393AMethod for fabricating a schottky junctionSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Mar 19, 1996·10 cites·15 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →