Inventor · disambiguated record
Hiroaki Sukegawa
Also filed as: SUKEGAWA HIROAKI
15 granted patents·18 citations·filing 2010–2021
87Inventor score
Files withNAT INST MATERIALS SCIENCE8TDK CORP2INOMATA KOICHIRO1NAT INST FOR MATERIALS SCIENCE1SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
15 records- 0190US9842636B2Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording mediumNAT INST MATERIALS SCIENCE·Filed 2016·Granted Dec 12, 2017·5 cites·12 claims
- 0285US10305027B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2017·Granted May 28, 2019·5 cites·18 claims
- 0383US10205091B2Monocrystalline magneto resistance element, method for producing the same and method for using sameNAT INST MATERIALS SCIENCE·Filed 2017·Granted Feb 12, 2019·2 cites·10 claims
- 0475US8872291B2Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing sameNAT INST FOR MATERIALS SCIENCE·Filed 2012·Granted Oct 28, 2014·4 cites·6 claims
- 0565US10749105B2Monocrystalline magneto resistance element, method for producing the same and method for using sameNAT INST MATERIALS SCIENCE·Filed 2018·Granted Aug 18, 2020·0 cites·8 claims
- 0665US10665776B2Magnetoresistance effect element and method for manufacturing the sameTDK CORP·Filed 2019·Granted May 26, 2020·0 cites·16 claims
- 0759US11585873B2Magnetoresistive effect element containing two non-magnetic layers with different crystal structuresTDK CORP·Filed 2021·Granted Feb 21, 2023·0 cites·12 claims
- 0859US10395809B2Perpendicular magnetic layer and magnetic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·0 cites·20 claims
- 0958US8575674B2Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using sameSUKEGAWA HIROAKI·Filed 2010·Granted Nov 5, 2013·2 cites·14 claims
- 1056US10832719B2Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the sameNAT INST MATERIALS SCIENCE·Filed 2018·Granted Nov 10, 2020·0 cites·15 claims
- 1153US10199063B2Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the sameNAT INST MATERIALS SCIENCE·Filed 2015·Granted Feb 5, 2019·0 cites·8 claims
- 1244US11105867B2Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junctionNAT INST MATERIALS SCIENCE·Filed 2017·Granted Aug 31, 2021·0 cites·10 claims
- 1343US11374168B2Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetization-type magnetic tunnel junction element in which said structure or magnetic tunnel junction film is usedNAT INST MATERIALS SCIENCE·Filed 2018·Granted Jun 28, 2022·0 cites·13 claims
- 1438US11107976B2Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junctionNAT INST MATERIALS SCIENCE·Filed 2018·Granted Aug 31, 2021·0 cites·14 claims
- 1536US8866243B2Ferromagnetic tunnel junction structure and magnetoresistive element using the sameINOMATA KOICHIRO·Filed 2010·Granted Oct 21, 2014·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →