Inventor · disambiguated record
Hiromasa Suo
Also filed as: SUO Hiromasa
11 granted patents·6 pending applications·5 citations·filing 2016–2025
82Inventor score
Top patents by PatentIndex Score
17 records- 0193US12215439B2SiC epitaxial waferRESONAC CORP·Filed 2023·Granted Feb 4, 2025·1 cites·5 claims
- 0293US11866846B2SiC substrate and SiC epitaxial waferRESONAC CORP·Filed 2023·Granted Jan 9, 2024·2 cites·21 claims
- 0391US11939699B2SiC substrate and SiC ingotRESONAC CORP·Filed 2023·Granted Mar 26, 2024·1 cites·20 claims
- 0486US12252810B2SiC substrate and SiC ingotRESONAC CORP·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 0580US12151941B2SiC substrate and SiC ingotRESONAC CORP·Filed 2023·Granted Nov 26, 2024·0 cites·13 claims
- 0679US12037249B2SiC substrate and SiC ingotRESONAC CORP·Filed 2023·Granted Jul 16, 2024·0 cites·12 claims
- 0774US12252809B2SiC substrate and SiC epitaxial waferRESONAC CORP·Filed 2023·Granted Mar 18, 2025·0 cites·16 claims
- 0872US2025015139A1SiC SUBSTRATE AND SiC EPITAXIAL WAFERRESONAC CORP·Filed 2024·Application pending·0 cites
- 0971US12132085B2SiC substrate and sic epitaxial waferRESONAC CORP·Filed 2023·Granted Oct 29, 2024·0 cites·30 claims
- 1071US2025035570A1METHOD FOR EVALUATING SiC SUBSTRATE, METHOD FOR MANUFACTURING SiC SUBSTRATE, AND SiC SUBSTRATE EVALUATION DEVICERESONAC CORP·Filed 2024·Application pending·0 cites
- 1171US2025034754A1SiC INGOT AND METHOD FOR MANUFACTURING SiC INGOTRESONAC CORP·Filed 2024·Application pending·0 cites
- 1269US11655561B2n-Type 4H—SiC single crystal substrate and method of producing n-type 4H—SiC single crystal substrateSHOWA DENKO KK·Filed 2019·Granted May 23, 2023·1 cites·8 claims
- 1366US2025179688A1SiC SUBSTRATE AND SiC EPITAXIAL WAFERRESONAC CORP·Filed 2025·Application pending·0 cites
- 1465US2025075371A1SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATERESONAC CORP·Filed 2024·Application pending·0 cites
- 1562US11542631B2Method for producing p-type 4H-SiC single crystalAIST·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 1658US10892334B2n-Type SiC single crystal substrate, method for producing same and SiC epitaxial waferSHOWA DENKO KK·Filed 2017·Granted Jan 12, 2021·0 cites·10 claims
- 1744US2018274125A1P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystalAIST·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →