Inventor · disambiguated record
Hidemi Takasu
Also filed as: TAKASU HIDEMI
29 granted patents·2 pending applications·817 citations·filing 1991–2014
97Inventor score
Top patents by PatentIndex Score
31 records- 0195US8044434B2Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the sameROHM CO LTD·Filed 2007·Granted Oct 25, 2011·43 cites·25 claims
- 0295US6674098B1ZnO compound semiconductor light emitting elementNAT INST OF ADVANCED IND SCIEN·Filed 2000·Granted Jan 6, 2004·56 cites·7 claims
- 0392US6314016B1Sequential circuits using ferroelectrics and semiconductor devices using the sameROHM CO LTD·Filed 1999·Granted Nov 6, 2001·97 cites·18 claims
- 0492US5518953AMethod for manufacturing semiconductor device having grown layer on insulating layerROHM CO LTD·Filed 1994·Granted May 21, 1996·85 cites·10 claims
- 0589US5614766ASemiconductor device with stacked alternate-facing chipsROHM CO LTD·Filed 1995·Granted Mar 25, 1997·106 cites·3 claims
- 0688US5365094ASemiconductor device including ferroelectric nonvolatile memoryROHM CO LTD·Filed 1992·Granted Nov 15, 1994·75 cites·7 claims
- 0785US7605012B2ZnO based compound semiconductor light emitting device and method for manufacturing the sameNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Oct 20, 2009·7 cites·5 claims
- 0885US5361224ANonvolatile memory device having ferroelectric filmROHM CO LTD·Filed 1993·Granted Nov 1, 1994·58 cites·13 claims
- 0984US5326991ASemiconductor device having silicon carbide grown layer on insulating layer and MOS deviceROHM CO LTD·Filed 1991·Granted Jul 5, 1994·50 cites·2 claims
- 1082US5307305ASemiconductor device having field effect transistor using ferroelectric film as gate insulation filmROHM CO LTD·Filed 1992·Granted Apr 26, 1994·50 cites·45 claims
- 1180US7999286B2MIS field effect transistor and method for manufacturing the sameROHM CO LTD·Filed 2007·Granted Aug 16, 2011·9 cites·17 claims
- 1277US6987029B2ZnO based compound semiconductor light emitting device and method for manufacturing the sameROHM CO LTD·Filed 2003·Granted Jan 17, 2006·10 cites·5 claims
- 1372US5308445AMethod of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrateROHM CO LTD·Filed 1992·Granted May 3, 1994·47 cites·32 claims
- 1461US6741489B2Data holding device and electronic circuit having data holding deviceROHM CO LTD·Filed 2002·Granted May 25, 2004·12 cites·18 claims
- 1559US5502668ASemiconductor memory device capable of low-voltage programmingROHM CO LTD·Filed 1994·Granted Mar 26, 1996·18 cites·9 claims
- 1657US6387762B2Method of manufacturing ferroelectric memory deviceROHM CO LTD·Filed 2001·Granted May 14, 2002·6 cites·8 claims
- 1754US5442222AMethod for manufacturing semiconductor device having grown layer on insulating layerROHM CO LTD·Filed 1994·Granted Aug 15, 1995·13 cites·2 claims
- 1853US10184894B2Cancer diagnostic device, diagnostic system, and diagnostic deviceROHM CO LTD·Filed 2014·Granted Jan 22, 2019·0 cites·16 claims
- 1952US7464131B2Logical calculation circuit, logical calculation device, and logical calculation methodROHM CO LTD·Filed 2004·Granted Dec 9, 2008·3 cites·26 claims
- 2050US5233219AThree-dimensional semiconductor device structureROHM CO LTD·Filed 1992·Granted Aug 3, 1993·13 cites·4 claims
- 2146US7026841B2Logical operation circuit and logical operation methodROHM CO LTD·Filed 2003·Granted Apr 11, 2006·5 cites·18 claims
- 2245US5565029AMethod for manufacturing semiconductor device having grown layer on insulating layerROHM CO LTD·Filed 1995·Granted Oct 15, 1996·8 cites·14 claims
- 2344US7450412B2Logical operation circuit and logical operation methodROHM CO LTD·Filed 2003·Granted Nov 11, 2008·4 cites·12 claims
- 2443US5610411ASilicon carbide bipolar semiconductor device with birdsbeak isolation structureROHM CO LTD·Filed 1991·Granted Mar 11, 1997·12 cites·2 claims
- 2543US5296086AMethod for manufacturing semiconductor device having grown layer on insulating layerROHM CO LTD·Filed 1991·Granted Mar 22, 1994·13 cites·6 claims
- 2640US2009321854A1Mis field effect transistor and method for manufacturing the sameOHTA HIROAKI·Filed 2007·Application pending·0 cites
- 2737US5402989AMethod for manufacturing semiconductor device having grown layer on insulating layerROHM CO LTD·Filed 1994·Granted Apr 4, 1995·8 cites·2 claims
- 2837US2002098599A1Method of manufacturing ferroelectric memory deviceFiled 2002·Application pending·0 cites
- 2934US6853027B2Semiconductor nonvolatile memory with low programming voltageROHM COMPANY LTD·Filed 1996·Granted Feb 8, 2005·4 cites·6 claims
- 3033US5635411AMethod of making semiconductor apparatusROHM CO LTD·Filed 1994·Granted Jun 3, 1997·5 cites·8 claims
- 3130US6884701B2Process for fabricating semiconductor deviceFiled 1998·Granted Apr 26, 2005·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →