Inventor · disambiguated record
Hiroshi Takato
Also filed as: TAKATO HIROSHI
17 granted patents·1,182 citations·filing 1990–2001
96Inventor score
Top patents by PatentIndex Score
17 records- 0198US5258635AMOS-type semiconductor integrated circuit deviceTOSHIBA KK·Filed 1991·Granted Nov 2, 1993·249 cites·14 claims
- 0295US5763315AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Jun 9, 1998·199 cites·9 claims
- 0395US5371024ASemiconductor device and process for manufacturing the sameTOSHIBA KK·Filed 1992·Granted Dec 6, 1994·128 cites·22 claims
- 0494US6046487AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Apr 4, 2000·169 cites·4 claims
- 0589US5414655ASemiconductor memory device having a stack-type capacitorTOSHIBA KK·Filed 1993·Granted May 9, 1995·66 cites·21 claims
- 0688US5248628AMethod of fabricating a semiconductor memory deviceTOSHIBA KK·Filed 1992·Granted Sep 28, 1993·69 cites·12 claims
- 0786US5923073AMethod of manufacturing a semiconductor device and semiconductor device manufactured according to the methodTOSHIBA KK·Filed 1997·Granted Jul 13, 1999·70 cites·19 claims
- 0883US5747844ADynamic semiconductor memory device with higher density bit line/word line layoutTOSHIBA KK·Filed 1996·Granted May 5, 1998·45 cites·31 claims
- 0979US6312982B1Method of fabricating a trench capacitorTOSHIBA KK·Filed 1999·Granted Nov 6, 2001·40 cites·10 claims
- 1073US5384280AMethod of manufacturing a semiconductor device isolated by a trenchTOSHIBA KK·Filed 1992·Granted Jan 24, 1995·40 cites·8 claims
- 1171US5144579ASemiconductor memory device and its fabricating methodTOSHIBA KK·Filed 1990·Granted Sep 1, 1992·31 cites·9 claims
- 1266US5578847ADynamic semiconductor memory device with higher density bit line/word line layoutTOSHIBA KK·Filed 1995·Granted Nov 26, 1996·23 cites·14 claims
- 1357US6339237B1Semiconductor device having a memory cell region and peripheral circuit region and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Jan 15, 2002·16 cites·7 claims
- 1446US6551882B2Semiconductor device manufacturing method permitting suppression of leak current through the PN junctionTOSHIBA KK·Filed 2001·Granted Apr 22, 2003·3 cites·6 claims
- 1545US5488242ASemiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Jan 30, 1996·13 cites·11 claims
- 1642US5164801AA p channel mis type semiconductor deviceTOSHIBA KK·Filed 1991·Granted Nov 17, 1992·10 cites·17 claims
- 1729US5248891AHigh integration semiconductor deviceTAKATO HIROSHI·Filed 1992·Granted Sep 28, 1993·11 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →