Inventor · disambiguated record
Hiroyuki Takazawa
Also filed as: TAKAZAWA HIROYUKI
15 granted patents·1 pending application·128 citations·filing 1993–2011
92Inventor score
Top patents by PatentIndex Score
16 records- 0184US8537505B2Magnetoresistive effect head having a free layer and a magnetic domain control layer that applies a magnetic field more strongly in an upper part of the free layerSHIIMOTO MASATO·Filed 2010·Granted Sep 17, 2013·6 cites·26 claims
- 0284US6392258B1High speed heterojunction bipolar transistor, and RF power amplifier and mobile communication system using the sameHITACHI LTD·Filed 2000·Granted May 21, 2002·31 cites·9 claims
- 0382US7768066B2Semiconductor device and electrical circuit device using thereofHITACHI LTD·Filed 2008·Granted Aug 3, 2010·11 cites·17 claims
- 0479US7307298B2Semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Dec 11, 2007·20 cites·21 claims
- 0576US7783265B2Switching element, antenna switch circuit and radio frequency module using the sameRENESAS TECH CORP·Filed 2008·Granted Aug 24, 2010·4 cites·19 claims
- 0675US6528378B2Semiconductor deviceHITACHI LTD·Filed 2002·Granted Mar 4, 2003·19 cites·5 claims
- 0771US7899412B2Switching element, antenna switch circuit and radio frequency module using the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Mar 1, 2011·2 cites·20 claims
- 0859US7838914B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2007·Granted Nov 23, 2010·1 cites·10 claims
- 0959US6576937B2Semiconductor device and power amplifier using the sameHITACHI LTD·Filed 2001·Granted Jun 10, 2003·7 cites·8 claims
- 1053US5739559ACompound semiconductor integrated circuit with a particular high resistance layerHITACHI LTD·Filed 1997·Granted Apr 14, 1998·14 cites·12 claims
- 1151US8385847B2Switching element, antenna switch circuit and radio frequency module using the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 26, 2013·0 cites·20 claims
- 1248US2006118951A1Switching element, antenna switch circuit and radio frequency module using the sameOGAWA TAKASHI·Filed 2005·Application pending·0 cites
- 1344US6787817B2Compound semiconductor having a doped layer between the gate and an ohmic contact of an active regionRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·2 cites·6 claims
- 1444US5523593ACompound semiconductor integrated circuit and optical regenerative repeater using the sameHITACHI LTD·Filed 1993·Granted Jun 4, 1996·11 cites·24 claims
- 1541US8169008B2Semiconductor deviceYAMANE MASAO·Filed 2010·Granted May 1, 2012·0 cites·15 claims
- 1639US6724020B2Semiconductor device and power amplifier using the sameRENESAS TECH CORP·Filed 2003·Granted Apr 20, 2004·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →