Inventor · disambiguated record
Hisashi Takemura
Also filed as: TAKEMURA HISASHI
25 granted patents·431 citations·filing 1989–2005
96Inventor score
Files withNEC CORP25
Top patents by PatentIndex Score
25 records- 0192US5099304ASemiconductor device with insulating isolation grooveNEC CORP·Filed 1989·Granted Mar 24, 1992·100 cites·2 claims
- 0288US5666020AField emission electron gun and method for fabricating the sameNEC CORP·Filed 1995·Granted Sep 9, 1997·58 cites·74 claims
- 0376US6933569B2Soi mosfetNEC CORP·Filed 2003·Granted Aug 23, 2005·24 cites·17 claims
- 0473US5576221AManufacturing method of semiconductor deviceNEC CORP·Filed 1994·Granted Nov 19, 1996·37 cites·12 claims
- 0564US7247910B2MOSFET formed on a silicon-on-insulator substrate having a SOI layer and method of manufacturingNEC CORP·Filed 2003·Granted Jul 24, 2007·11 cites·4 claims
- 0664US6975001B2Semiconductor device and method of fabricating the sameNEC CORP·Filed 2002·Granted Dec 13, 2005·10 cites·33 claims
- 0763US5717275AMulti-emitter electron gun of a field emission type capable of emitting electron beam with its divergence suppressedNEC CORP·Filed 1996·Granted Feb 10, 1998·17 cites·20 claims
- 0861US5910701AField-emission cold cathode and manufacturing method for sameNEC CORP·Filed 1998·Granted Jun 8, 1999·14 cites·7 claims
- 0960US5397731AMethod of manufacturing semiconductor integrated circuit deviceNEC CORP·Filed 1994·Granted Mar 14, 1995·31 cites·6 claims
- 1058US5374846ABipolar transistor with a particular base and collector regionsNEC CORP·Filed 1993·Granted Dec 20, 1994·18 cites·10 claims
- 1155US7485923B2SOI semiconductor device with improved halo region and manufacturing method of the sameNEC CORP·Filed 2002·Granted Feb 3, 2009·6 cites·13 claims
- 1255US5627402AVariable-capacitance device and semiconductor integrated circuit device having such variable-capacitance deviceNEC CORP·Filed 1995·Granted May 6, 1997·14 cites·2 claims
- 1354US6024618AMethod of operating electron tubeNEC CORP·Filed 1999·Granted Feb 15, 2000·10 cites·6 claims
- 1454US5587326AMethod of forming bipolar junction transistor of epitaxial planar typeNEC CORP·Filed 1992·Granted Dec 24, 1996·24 cites·9 claims
- 1553US6018215AField emission cold cathode having a cone-shaped emitterNEC CORP·Filed 1997·Granted Jan 25, 2000·10 cites·10 claims
- 1649US6031322AField emission cold cathode having a serial resistance layer divided into a plurality of sectionsNEC CORP·Filed 1997·Granted Feb 29, 2000·9 cites·6 claims
- 1749US5620350AMethod for making a field-emission type electron gunNEC CORP·Filed 1995·Granted Apr 15, 1997·8 cites·6 claims
- 1847US5924903AMethod of fabricating a cold cathode for field emissionNEC CORP·Filed 1997·Granted Jul 20, 1999·7 cites·8 claims
- 1944US7611934B2Semiconductor device and method of fabricating the sameNEC CORP·Filed 2005·Granted Nov 3, 2009·0 cites·28 claims
- 2043US7211517B2Semiconductor device and method that includes reverse tapering multiple layersNEC CORP·Filed 2002·Granted May 1, 2007·2 cites·20 claims
- 2143US6060823AField emission cold cathode elementNEC CORP·Filed 1998·Granted May 9, 2000·6 cites·12 claims
- 2242US5506442AVariable-capacitance device and semiconductor integrated circuit device having such variable-capacitance deviceNEC CORP·Filed 1994·Granted Apr 9, 1996·7 cites·15 claims
- 2340US6084341AElectric field emission cold cathodeNEC CORP·Filed 1997·Granted Jul 4, 2000·4 cites·8 claims
- 2437US6043103AField-emission cold cathode and method of manufacturing sameNEC CORP·Filed 1998·Granted Mar 28, 2000·3 cites·6 claims
- 2532US6351059B1Field-emission type cold cathode and application thereofNEC CORP·Filed 1999·Granted Feb 26, 2002·1 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →