Inventor · disambiguated record
Hiroaki Tanizaki
Also filed as: TANIZAKI HIROAKI
59 granted patents·8 pending applications·1,210 citations·filing 1998–2018
99Inventor score
Files withMITSUBISHI ELECTRIC CORP22RENESAS TECH CORP14SONY CORP9MITSUBISHI ELECTRIC ENG4AUTOMOTIVE ENERGY SUPPLY CORP3
Top patents by PatentIndex Score
67 records- 0197US7436699B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Oct 14, 2008·78 cites·17 claims
- 0297US7423898B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Sep 9, 2008·62 cites·11 claims
- 0396US6300013B1Material for negative electrode and nonaqueous-electrolyte battery incorporating the sameSONY CORP·Filed 2000·Granted Oct 9, 2001·105 cites·14 claims
- 0494US6679925B1Methods of manufacturing negative material and secondary batterySONY CORP·Filed 2000·Granted Jan 20, 2004·56 cites·12 claims
- 0592US7233537B2Thin film magnetic memory device provided with a dummy cell for data read referenceMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Jun 19, 2007·69 cites·25 claims
- 0690US6842366B2Thin film magnetic memory device executing self-reference type data readRENESAS TECH CORP·Filed 2003·Granted Jan 11, 2005·55 cites·16 claims
- 0790US6400632B1Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fallMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·56 cites·16 claims
- 0888US6384674B2Semiconductor device having hierarchical power supply line structure improved in operating speedMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 7, 2002·73 cites·18 claims
- 0987US7369429B2Non-volatile memory device having toggle cellRENESAS TECH CORP·Filed 2006·Granted May 6, 2008·19 cites·13 claims
- 1087US6762953B2Nonvolatile memory device with sense amplifier securing reading marginRENESAS TECH CORP·Filed 2003·Granted Jul 13, 2004·46 cites·12 claims
- 1187US6411560B1Semiconductor memory device capable of reducing leakage current flowing into substrateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 25, 2002·48 cites·19 claims
- 1286US6677080B2Non-aqueous electrolyte secondary cellSONY CORP·Filed 2001·Granted Jan 13, 2004·28 cites·15 claims
- 1385US9537148B2Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary batteryNISSAN MOTOR·Filed 2014·Granted Jan 3, 2017·4 cites·14 claims
- 1484US6385125B1Synchronous semiconductor integrated circuit device capable of test time reductionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 7, 2002·57 cites·12 claims
- 1582US9843033B2Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary batteryNISSAN MOTOR·Filed 2014·Granted Dec 12, 2017·3 cites·13 claims
- 1682US8927149B2Negative electrode for lithium ion secondary battery and battery using sameOHARA KENJI·Filed 2010·Granted Jan 6, 2015·5 cites·9 claims
- 1781US8339850B2Semiconductor deviceTANIZAKI HIROAKI·Filed 2010·Granted Dec 25, 2012·8 cites·6 claims
- 1880US6778445B2Pipeline nonvolatile memory device with multi-bit parallel read and write suitable for cache memory.RENESAS TECH CORP·Filed 2003·Granted Aug 17, 2004·28 cites·17 claims
- 1980US6738285B2Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elementsRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·28 cites·20 claims
- 2080US6163488ASemiconductor device with antifuseMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 19, 2000·43 cites·17 claims
- 2179US7848081B2Lithium-ion capacitorFUJI HEAVY IND LTD·Filed 2007·Granted Dec 7, 2010·10 cites·6 claims
- 2277US6884543B2Material for positive electrode and secondary batterySONY CORP·Filed 2001·Granted Apr 26, 2005·15 cites·22 claims
- 2377US6333869B1Semiconductor memory device with readily changeable memory capacityMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 25, 2001·25 cites·10 claims
- 2474US6549445B2Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Apr 15, 2003·18 cites·1 claims
- 2573US9819050B2Non-aqueous electrolyte secondary batteryNISSAN MOTOR·Filed 2014·Granted Nov 14, 2017·1 cites·2 claims
- 2672US6381167B2Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 30, 2002·17 cites·11 claims
- 2770US6791876B2Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the likeRENESAS TECH CORP·Filed 2003·Granted Sep 14, 2004·17 cites·12 claims
- 2870US6788569B2Thin film magnetic memory device reducing a charging time of a data line in a data read operationRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·13 cites·8 claims
- 2969US6055206ASynchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operationMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 25, 2000·28 cites·20 claims
- 3069US2018226638A1Negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative materialMURATA MANUFACTURING CO·Filed 2018·Application pending·0 cites
- 3168US7045251B2Material for positive electrode and secondary batterySONY CORP·Filed 2005·Granted May 16, 2006·2 cites·2 claims
- 3268US6856537B2Thin film magnetic memory device having dummy cellRENESAS TECH CORP·Filed 2002·Granted Feb 15, 2005·16 cites·13 claims
- 3367US9972831B2Negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative materialSONY CORP·Filed 2016·Granted May 15, 2018·0 cites·23 claims
- 3467US6310808B1Semiconductor memory device having structure for high-speed data processingMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 30, 2001·15 cites·20 claims
- 3566US6781873B2Non-volatile memory device capable of generating accurate reference current for determinationRENESAS TECH CORP·Filed 2003·Granted Aug 24, 2004·14 cites·12 claims
- 3666US6603685B2Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltageMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 5, 2003·15 cites·26 claims
- 3765US6707737B2Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in testMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 16, 2004·13 cites·13 claims
- 3864US8508986B2Semiconductor deviceTANIZAKI HIROAKI·Filed 2011·Granted Aug 13, 2013·3 cites·10 claims
- 3964US6835226B2Negative electrode active material, method of producing the same, and nonaqueous electrolyte cellSONY CORP·Filed 2003·Granted Dec 28, 2004·5 cites·29 claims
- 4063US6940767B2Semiconductor memory device having a plurality of signal lines for writing and reading dataMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Sep 6, 2005·12 cites·5 claims
- 4161US8139402B2Magnetic memory deviceTANIZAKI HIROAKI·Filed 2009·Granted Mar 20, 2012·2 cites·29 claims
- 4261US7295465B2Thin film magnetic memory device reducing a charging time of a data line in a data read operationRENESAS TECH CORP·Filed 2006·Granted Nov 13, 2007·3 cites·5 claims
- 4361US6466509B1Semiconductor memory device having a column select line transmitting a column select signalMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Oct 15, 2002·12 cites·10 claims
- 4461US6288573B1Semiconductor device capable of operating fast with a low voltage and reducing power consumption during standbyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 11, 2001·21 cites·15 claims
- 4560US6885235B2Semiconductor integrated circuit device with internal power supply potential generation circuitMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Apr 26, 2005·11 cites·18 claims
- 4659US7125630B2Non-aqueous electrolyte batterySONY CORP·Filed 2003·Granted Oct 24, 2006·3 cites·9 claims
- 4759US7050349B2Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assemblyMITSUBISHI ELECTRIC ENG·Filed 2002·Granted May 23, 2006·10 cites·11 claims
- 4858US7309545B2Anode material and battery using the sameSONY CORP·Filed 2003·Granted Dec 18, 2007·2 cites·9 claims
- 4953US10107863B2Test method for secondary batteryAUTOMOTIVE ENERGY SUPPLY CORP·Filed 2013·Granted Oct 23, 2018·0 cites·2 claims
- 5053US10026953B2Mixed electrode for nonaqueous electrolyte battery, and manufacturing method for the sameAUTOMOTIVE ENERGY SUPPLY CORP·Filed 2013·Granted Jul 17, 2018·0 cites·5 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hiroaki Tanizaki files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →