Inventor · disambiguated record
Hidekazu Tsuchida
Also filed as: TSUCHIDA HIDEKAZU
47 granted patents·11 pending applications·157 citations·filing 2003–2025
97Inventor score
Files withFUJI ELECTRIC CO LTD9CENTRAL RES INST ELECT8NUFLARE TECHNOLOGY INC8DENSO CORP7SHOWA DENKO KK5
Top patents by PatentIndex Score
58 records- 0195US9518322B2Film formation apparatus and film formation methodNUFLARE TECHNOLOGY INC·Filed 2014·Granted Dec 13, 2016·11 cites·12 claims
- 0294US9873941B2Film-forming manufacturing apparatus and methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Jan 23, 2018·5 cites·4 claims
- 0392US12071709B2Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal waferDENSO CORP·Filed 2023·Granted Aug 27, 2024·2 cites·2 claims
- 0491US8716718B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2012·Granted May 6, 2014·15 cites·13 claims
- 0588US11600538B2SiC epitaxial wafer and method for producing SiC epitaxial waferSHOWA DENKO KK·Filed 2021·Granted Mar 7, 2023·1 cites·12 claims
- 0688US9598792B2Film-forming apparatus and film-forming methodSUZUKI KUNIHIKO·Filed 2012·Granted Mar 21, 2017·3 cites·15 claims
- 0786US10665681B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted May 26, 2020·4 cites·17 claims
- 0886US8815711B2Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductorSUZUKI KUNIHIKO·Filed 2011·Granted Aug 26, 2014·7 cites·20 claims
- 0986US7902054B2Schottky barrier semiconductor device and method for manufacturing the sameCENTRAL RES INST ELECT·Filed 2007·Granted Mar 8, 2011·13 cites·2 claims
- 1086US7737011B2Method for improving the quality of an SiC crystal and an SiC semiconductor deviceCENTRAL RES INST ELECT·Filed 2006·Granted Jun 15, 2010·9 cites·23 claims
- 1185US7507650B2Process for producing Schottky junction type semiconductor deviceCENTRAL RES INST ELECT·Filed 2005·Granted Mar 24, 2009·12 cites·7 claims
- 1283US7081420B2Method for preparing SiC crystal and SiC crystalCENTRAL RES INST ELECT·Filed 2003·Granted Jul 25, 2006·20 cites·28 claims
- 1380US8154026B2Silicon carbide bipolar semiconductor deviceISHII RYOSUKE·Filed 2006·Granted Apr 10, 2012·8 cites·20 claims
- 1480US7754589B2Method for improving the quality of a SiC crystalCENTRAL RES INST ELECT·Filed 2008·Granted Jul 13, 2010·5 cites·9 claims
- 1577US10453924B2Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 22, 2019·2 cites·4 claims
- 1677US7834362B2SiC crystal semiconductor deviceCENTRAL RES INST ELECT·Filed 2008·Granted Nov 16, 2010·4 cites·12 claims
- 1776US10262863B2Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatusSHOWA DENKO KK·Filed 2015·Granted Apr 16, 2019·2 cites·9 claims
- 1876US2024191392A1Silicon carbide single crystal and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2024·Application pending·0 cites
- 1974US7960737B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·2 cites·1 claims
- 2073US2024110309A1Method for manufacturing silicon carbide single crystal and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2023·Application pending·0 cites
- 2172US2023279580A1Silicon carbide single crystal and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2023·Application pending·0 cites
- 2270US8178949B2Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltageISHII RYOSUKE·Filed 2008·Granted May 15, 2012·5 cites·10 claims
- 2369US10896831B2Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2018·Granted Jan 19, 2021·1 cites·10 claims
- 2469US10354867B2Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·18 claims
- 2569US9879359B2Silicon carbide semiconductor film-forming apparatus and film-forming method using the sameDENSO CORP·Filed 2014·Granted Jan 30, 2018·2 cites·14 claims
- 2669US8293623B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2008·Granted Oct 23, 2012·3 cites·14 claims
- 2768US7960257B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·3 claims
- 2868US7960738B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·1 claims
- 2968US2025215613A1Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2025·Application pending·0 cites
- 3067US8815708B2Method for improving the quality of a SiC crystalTSUCHIDA HIDEKAZU·Filed 2010·Granted Aug 26, 2014·2 cites·3 claims
- 3166US11846040B2Silicon carbide single crystalDENSO CORP·Filed 2020·Granted Dec 19, 2023·0 cites·12 claims
- 3266US7768017B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC CO INC·Filed 2004·Granted Aug 3, 2010·9 cites·5 claims
- 3365US8178940B2Schottky barrier diode and method for using the sameNAKAMURA TOMONORI·Filed 2006·Granted May 15, 2012·3 cites·3 claims
- 3464US12281410B2Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingotCENTRAL RES INST ELECTRIC POWER IND·Filed 2021·Granted Apr 22, 2025·0 cites·1 claims
- 3563US9570337B2Film formation apparatus and film formation methodNUFLARE TECHNOLOGY INC·Filed 2014·Granted Feb 14, 2017·1 cites·7 claims
- 3661US8367510B2Process for producing silicon carbide semiconductor deviceCENTRAL RES INST ELECT·Filed 2006·Granted Feb 5, 2013·1 cites·10 claims
- 3760US2024110308A1Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystalCENTRAL RES INST ELECTRIC POWER IND·Filed 2023·Application pending·0 cites
- 3857US11906569B2Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing methodSHOWA DENKO KK·Filed 2021·Granted Feb 20, 2024·0 cites·15 claims
- 3956US8455269B2Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devicesMIYANAGI TOSHIYUKI·Filed 2006·Granted Jun 4, 2013·2 cites·10 claims
- 4055US12252808B2Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal waferDENSO CORP·Filed 2020·Granted Mar 18, 2025·0 cites·9 claims
- 4152US2015376813A1Method for producing hexagonal single crystal, method for producing hexagonal single crystal wafer, hexagonal single crystal wafer, and hexagonal single crystal elementCENTRAL RES INST ELECT·Filed 2014·Application pending·0 cites
- 4251US2013152853A1Film-forming apparatus and film-forming methodNUFLARE TECHNOLOGY INC·Filed 2012·Application pending·0 cites
- 4349US11948976B2Vertical MOSFET having trench gate structure containing silicon carbideFUJI ELECTRIC CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·7 claims
- 4448US10748763B2Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·17 claims
- 4547US12297562B2Silicon carbide ingot including screw dislocationsMIRISE Technologies Corporation·Filed 2022·Granted May 13, 2025·0 cites·2 claims
- 4647US12249625B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 4747US11107892B2SiC epitaxial wafer and method for producing sameSHOWA DENKO KK·Filed 2018·Granted Aug 31, 2021·0 cites·7 claims
- 4846US10522667B2Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·11 claims
- 4946US10181517B2Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic deviceDENSO CORP·Filed 2016·Granted Jan 15, 2019·0 cites·13 claims
- 5046US9496345B2Semiconductor structure, semiconductor device, and method for producing semiconductor structureNAT INST ADVANCED IND SCIENCE & TECH·Filed 2013·Granted Nov 15, 2016·0 cites·11 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →