Inventor · disambiguated record
Hisanao Tsuge
Also filed as: TSUGE HISANAO
22 granted patents·1 pending application·582 citations·filing 1983–2008
96Inventor score
Top patents by PatentIndex Score
23 records- 0193US6542342B1Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layerNEC CORP·Filed 1999·Granted Apr 1, 2003·69 cites·1 claims
- 0293US6538861B1Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using itNEC CORP·Filed 2000·Granted Mar 25, 2003·44 cites·33 claims
- 0389US6950290B2Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layerNEC CORP·Filed 2002·Granted Sep 27, 2005·21 cites·18 claims
- 0487US6333842B1Magneto-resistance effect type composite head and production method thereofNEC CORP·Filed 1998·Granted Dec 25, 2001·49 cites·23 claims
- 0586US6490139B1Magneto-resistive element and magnetic head for data writing/readingNEC CORP·Filed 2000·Granted Dec 3, 2002·33 cites·11 claims
- 0685US6452204B1Tunneling magnetoresistance transducer and method for manufacturing the sameNEC CORP·Filed 1999·Granted Sep 17, 2002·91 cites·27 claims
- 0784US6392281B1Ferromagnetic tunnel junction device and method of forming the sameNEC CORP·Filed 2000·Granted May 21, 2002·21 cites·27 claims
- 0882US7372673B2Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layerNEC CORP·Filed 2005·Granted May 13, 2008·7 cites·5 claims
- 0981US4953283AMethod of handling electronic component chipsMURATA MANUFACTURING CO·Filed 1988·Granted Sep 4, 1990·43 cites·21 claims
- 1079US6341053B1Magnetic tunnel junction elements and their fabrication methodNEC CORP·Filed 1998·Granted Jan 22, 2002·81 cites·13 claims
- 1172US6639766B2Magneto-resistance effect type composite head and production method thereofNEC CORP·Filed 2001·Granted Oct 28, 2003·8 cites·13 claims
- 1270US6329078B1Magnetoresistive element and method of forming the sameNEC CORP·Filed 1998·Granted Dec 11, 2001·21 cites·73 claims
- 1369US7638797B2Substrate of emitting device and emitting device using the sameSAMSUNG MOBILE DISPLAY CO LTD·Filed 2008·Granted Dec 29, 2009·2 cites·18 claims
- 1467US6493195B1Magnetoresistance element, with lower electrode anti-erosion/flaking layerNEC CORP·Filed 2000·Granted Dec 10, 2002·13 cites·16 claims
- 1565US6174736B1Method of fabricating ferromagnetic tunnel junction deviceNEC CORP·Filed 1998·Granted Jan 16, 2001·17 cites·14 claims
- 1664US7180235B2Light-emitting device substrate with light control layer and light-emitting device using the sameSAMSUNG SDI CO LTD·Filed 2004·Granted Feb 20, 2007·10 cites·18 claims
- 1761US7391048B2Optical control portion with graded metal dopant to control refractive indexSAMSUNG SDI CO LTD·Filed 2004·Granted Jun 24, 2008·7 cites·20 claims
- 1861US4548834AMethod of producing a Josephson tunnel barrierNEC CORP·Filed 1983·Granted Oct 22, 1985·18 cites·12 claims
- 1959US6215696B1Ferromagnetic tunnel junction device and method of forming the sameNEC CORP·Filed 1998·Granted Apr 10, 2001·13 cites·48 claims
- 2057US6914257B2Magnetoresistive device and method of producing the sameNEC CORP·Filed 2002·Granted Jul 5, 2005·6 cites·4 claims
- 2143US2002164828A1Tunneling magnetoresistance transducer and method for manufacturing the sameNEC CORP·Filed 2002·Application pending·0 cites
- 2231US4983545APlanarization of dielectric films on integrated circuitsNEC CORP·Filed 1988·Granted Jan 8, 1991·6 cites·20 claims
- 2330US5681500AMagnetic oxide having a large magnetoresistance effect at room temperatureNEC CORP·Filed 1996·Granted Oct 28, 1997·2 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →