Inventor · disambiguated record
Hitomi Watanabe
Also filed as: SAKURAI HITOMI · WATANABE HITOMI
13 granted patents·111 citations·filing 1995–2018
91Inventor score
Top patents by PatentIndex Score
13 records- 0169US5602408ASemiconductor device having polycrystalline silicon load devicesSEIKO INSTR INC·Filed 1995·Granted Feb 11, 1997·27 cites·19 claims
- 0267US7241665B2Shallow trench isolationSILTERRA MALAYSIA SDN BHD·Filed 2006·Granted Jul 10, 2007·4 cites·11 claims
- 0367US6573557B1EEPROM cell having reduced cell areaSEIKO INSTR INC·Filed 2000·Granted Jun 3, 2003·16 cites·6 claims
- 0462US7161198B2Semiconductor integrated circuit device having MOS transistorSEIKO INSTR INC·Filed 2002·Granted Jan 9, 2007·11 cites·30 claims
- 0557US7091104B2Shallow trench isolationSILTERRA MALAYSIA SDN BHD·Filed 2003·Granted Aug 15, 2006·9 cites·16 claims
- 0656US6420222B1Method of producing semiconductor having two-layer polycrystalline silicon structureSEIKO INSTR INC·Filed 1998·Granted Jul 16, 2002·18 cites·19 claims
- 0753US6818514B2Semiconductor device with dual gate oxidesSILTERRA MALAYSIA SDN BHD·Filed 2003·Granted Nov 16, 2004·6 cites·20 claims
- 0847USD918256SPortion of a display panel or screen with a graphical user interfaceSONY CORP·Filed 2018·Granted May 4, 2021·4 cites·1 claims
- 0947US5672906ASemiconductor device having defects of deep level generated by electron beam irradiation in a semiconductor substrateSEIKO INSTR INC·Filed 1996·Granted Sep 30, 1997·11 cites·5 claims
- 1045US7056836B2Manufacturing method for a semiconductor deviceSEIKO INSTR INC·Filed 2003·Granted Jun 6, 2006·2 cites·10 claims
- 1143US7259071B2Semiconductor device with dual gate oxidesSILTERRA MALAYSIA SDN BHD·Filed 2004·Granted Aug 21, 2007·2 cites·20 claims
- 1240US6656780B2Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processesSEIKO INSTR INC·Filed 2001·Granted Dec 2, 2003·1 cites·12 claims
- 1332US6680244B2Method for manufacturing semiconductor deviceSEIKO INSTR INC·Filed 2001·Granted Jan 20, 2004·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →