Inventor · disambiguated record
Hokyun Ahn
Also filed as: AHN HOKYUN
19 granted patents·8 pending applications·50 citations·filing 2003–2025
92Inventor score
Files withKOREA ELECTRONICS TELECOMM12ELECTRONICS & TELECOMMUNICATIONS RES INST8AHN HOKYUN2KANG DONG MIN1LEE SANG-HEUNG1
Top patents by PatentIndex Score
27 records- 0186US9136396B2Semiconductor device and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Sep 15, 2015·8 cites·14 claims
- 0279US8901608B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Dec 2, 2014·4 cites·20 claims
- 0376US9634112B2Field effect transistor and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Apr 25, 2017·2 cites·11 claims
- 0474US8338241B2Method of manufacturing high frequency device structureYOON HYUNG SUP·Filed 2011·Granted Dec 25, 2012·4 cites·13 claims
- 0571US10608102B2Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Granted Mar 31, 2020·1 cites·15 claims
- 0671US10256811B2Cascode switch circuit including level shifterELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2017·Granted Apr 9, 2019·2 cites·14 claims
- 0770US9159612B2Semiconductor device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Oct 13, 2015·2 cites·6 claims
- 0870US8053345B2Method for fabricating field effect transistor using a compound semiconductorKOREA ELECTRONICS TELECOMM·Filed 2010·Granted Nov 8, 2011·3 cites·10 claims
- 0966US8952422B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Feb 10, 2015·1 cites·5 claims
- 1062US8941231B2Electronic chip and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Jan 27, 2015·1 cites·18 claims
- 1162US6979871B2Semiconductor device having T-shaped gate electrode and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Dec 27, 2005·9 cites·5 claims
- 1261US8518794B2Semiconductor devices and methods of forming thereofAHN HOKYUN·Filed 2010·Granted Aug 27, 2013·2 cites·18 claims
- 1361US2025374765A1Display device and electronic device including the sameSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 1460US2025351515A1High electron mobility transistor and manufacturing method of the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2024·Application pending·0 cites
- 1558US8586462B2Method of manufacturing a field-effect transistorAHN HOKYUN·Filed 2011·Granted Nov 19, 2013·1 cites·9 claims
- 1657US6933543B2Compound semiconductor high frequency switch deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Aug 23, 2005·8 cites·13 claims
- 1755US2015129890A1TransistorKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 1853US8609474B2Method of manufacturing semiconductor deviceLIM JONG-WON·Filed 2011·Granted Dec 17, 2013·1 cites·6 claims
- 1952US11916140B2Compound semiconductor deviceELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2021·Granted Feb 27, 2024·0 cites·18 claims
- 2052US8294521B2Power amplifier having depletion mode high electron mobility transistorKANG DONG MIN·Filed 2010·Granted Oct 23, 2012·1 cites·16 claims
- 2151US9490214B2Semiconductor device and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Nov 8, 2016·0 cites·11 claims
- 2249US2014035044A1Field-effect transistor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 2348US2014159050A1Field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 2447US8058658B2High-speed optical interconnection deviceLEE SANG-HEUNG·Filed 2009·Granted Nov 15, 2011·0 cites·10 claims
- 2547US2025380444A1Gallium nitride-based high-power rf device and method for fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2025·Application pending·0 cites
- 2641US2014166615A1Mold structure and method of imprint lithography using the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 2740US2019081166A1Gate-all-around device and method for fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →