Inventor · disambiguated record

Horng-Chang Dai

Also filed as: DAI HORNG-CHANG

1 granted patent·52 citations·filing 1996–1996

48Inventor score

Technology areasH10W

Files withIND TECH RES INST1

Top patents by PatentIndex Score

1 record

0172US5710076AMethod for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coatingIND TECH RES INST·Filed 1996·Granted Jan 20, 1998·52 cites·26 claims

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