Inventor · disambiguated record
Ho Won Jang
Also filed as: JANG HO WON
16 granted patents·9 pending applications·59 citations·filing 2002–2025
90Inventor score
Files withSAMSUNG ELECTRONICS CO LTD7KOREA INST SCI & TECH4SEOUL NAT UNIV R&DB FOUNDATION3UNIV POHANG3CHOI JI WON2
Top patents by PatentIndex Score
25 records- 0197US11588034B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·4 cites·26 claims
- 0288US9285332B2Low power consumption type gas sensor and method for manufacturing the sameKOREA INST SCI & TECH·Filed 2014·Granted Mar 15, 2016·9 cites·12 claims
- 0386US11585796B2Flexible graphene gas sensor, sensor array and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2019·Granted Feb 21, 2023·7 cites·16 claims
- 0480US12255244B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 0575US2025185339A1Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0672US8785924B2High-sensitivity transparent gas sensor and method for manufacturing the sameJANG HO WON·Filed 2012·Granted Jul 22, 2014·3 cites·9 claims
- 0772US7214325B2Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatmentLG ELECTRONICS INC·Filed 2002·Granted May 8, 2007·18 cites·19 claims
- 0871US12439738B2Semiconductor structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 7, 2025·0 cites·13 claims
- 0970US2025255044A1Light-emitting diode (led) device, method of manufacturing the same, and display device including the led deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1069US10804102B2Flexible device on which pattern of 2-dimensional material is formed and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2019·Granted Oct 13, 2020·1 cites·14 claims
- 1167US2025386677A1Display device, method of manufacturing the same and deposition maskSAMSUNG DISPLAY CO LTD·Filed 2025·Application pending·0 cites
- 1265US12283646B2Light-emitting diode (LED) device, method of manufacturing the same, and display device including the LED deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 22, 2025·0 cites·25 claims
- 1357US2013199612A1Hydrophobic substrate with anti-reflective property method for manufacturing the same, and solar cell module including the sameKOREA INST SCI & TECH·Filed 2012·Application pending·0 cites
- 1456US2013098754A1Transparent conductive composition, target, transparent conductive thin film using the target and method for fabricating the sameKOREA INST SCI & TECH·Filed 2012·Application pending·0 cites
- 1555US6762083B2Method for manufacturing heterojunction field effect transistor deviceUNIV POHANG·Filed 2002·Granted Jul 13, 2004·7 cites·9 claims
- 1654US12310268B2Neuromorphic memristor device based on vertically-oriented halide perovskite nanostructure and method of manufacturing the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2021·Granted May 20, 2025·0 cites·9 claims
- 1754US7754351B2Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakageWISCONSIN ALUMNI RES FOUND·Filed 2008·Granted Jul 13, 2010·0 cites·32 claims
- 1854US2012211355A1Transparent conductive composition, target, transparent conductive thin film using the target and method for fabricating the sameCHOI JI WON·Filed 2011·Application pending·0 cites
- 1953US2024006554A1Light-emitting device, display apparatus including the same, and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2052US7081401B2Method of fabricating a p-type ohmic electrode in gallium nitride based optical deviceUNIV POHANG·Filed 2003·Granted Jul 25, 2006·5 cites·2 claims
- 2152US6818467B2P-type ohmic electrode in gallium nitride based optical device and fabrication method thereofUNIV POHANG·Filed 2003·Granted Nov 16, 2004·5 cites·5 claims
- 2247US9219198B2Method for forming metal electrode, method for manufacturing semiconductor light emitting elements and nitride based compound semiconductor light emitting elementsLEE JONG-LAM·Filed 2007·Granted Dec 22, 2015·0 cites·19 claims
- 2345US2012298008A1Dielectric thin film for low temperature process and method for manufacturing the sameCHOI JI WON·Filed 2011·Application pending·0 cites
- 2444US2011212323A1Method for preparing oxide thin film gas sensors with high sensitivityKOREA INST SCI & TECH·Filed 2010·Application pending·0 cites
- 2541US11437574B2Non-volatile resistive-switching memory containing halide perovskite material and method for fabricating the sameSEOUL UNIV R&DB FOUNDATION·Filed 2019·Granted Sep 6, 2022·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →