Inventor · disambiguated record
Hochul Lee
Also filed as: LEE HOCHUL
27 granted patents·4 pending applications·114 citations·filing 2010–2024
95Inventor score
Top patents by PatentIndex Score
31 records- 0198US10483457B1Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and arrayQUALCOMM INC·Filed 2018·Granted Nov 19, 2019·43 cites·8 claims
- 0296US11114176B1Systems and methods to provide write termination for one time programmable memory cellsQUALCOMM INC·Filed 2020·Granted Sep 7, 2021·7 cites·30 claims
- 0395US11250895B1Systems and methods for driving wordlines using set-reset latchesQUALCOMM INC·Filed 2020·Granted Feb 15, 2022·6 cites·28 claims
- 0494US11164610B1Memory device with built-in flexible double redundancyQUALCOMM INC·Filed 2020·Granted Nov 2, 2021·4 cites·23 claims
- 0591US10861527B2Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memoryINSTON INC·Filed 2019·Granted Dec 8, 2020·4 cites·20 claims
- 0689US11177010B1Bitcell for data redundancyQUALCOMM INC·Filed 2020·Granted Nov 16, 2021·3 cites·20 claims
- 0789US11152038B2Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuitQUALCOMM INC·Filed 2020·Granted Oct 19, 2021·3 cites·11 claims
- 0888US11568904B1Memory with positively boosted write multiplexerQUALCOMM INC·Filed 2021·Granted Jan 31, 2023·2 cites·25 claims
- 0988US10460785B1Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memoryQUALCOMM INC·Filed 2018·Granted Oct 29, 2019·8 cites·11 claims
- 1086US9672886B2Fast and low-power sense amplifier and writing circuit for high-speed MRAMUNIV CALIFORNIA·Filed 2015·Granted Jun 6, 2017·10 cites·25 claims
- 1184US10102893B2Systems for implementing word line pulse techniques in magnetoelectric junctionsINSTON INC·Filed 2017·Granted Oct 16, 2018·7 cites·17 claims
- 1283US11250924B1One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methodsQUALCOMM INC·Filed 2020·Granted Feb 15, 2022·2 cites·22 claims
- 1380US10460786B2Systems and methods for reducing write error rate in magnetoelectric random access memory through pulse sharpening and reverse pulse schemesINSTON INC·Filed 2018·Granted Oct 29, 2019·5 cites·20 claims
- 1478US10796735B1Read tracking scheme for a memory deviceQUALCOMM INC·Filed 2019·Granted Oct 6, 2020·4 cites·15 claims
- 1575US12477874B2Display apparatus including a low brightness areaSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·16 claims
- 1670US10199100B1Sensing circuit and memory using thereofINSTON INC·Filed 2017·Granted Feb 5, 2019·1 cites·6 claims
- 1769US2024395320A1Memory with double redundancyQUALCOMM INC·Filed 2024·Application pending·0 cites
- 1868US10754163B2Image generation method and display device using the sameLG DISPLAY CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·7 claims
- 1967US12094528B2Memory with double redundancyQUALCOMM INC·Filed 2022·Granted Sep 17, 2024·0 cites·15 claims
- 2064US8511201B2Noise reduction apparatus for shift cableCHO YANGRAE·Filed 2010·Granted Aug 20, 2013·4 cites·7 claims
- 2160US11640835B2Memory device with built-in flexible double redundancyQUALCOMM INC·Filed 2021·Granted May 2, 2023·0 cites·13 claims
- 2259US12159963B2Display apparatus including a low brightness areaSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 3, 2024·0 cites·17 claims
- 2357US12451171B2High-speed and area-efficient parallel-write-and-read memoryQUALCOMM INC·Filed 2023·Granted Oct 21, 2025·0 cites·24 claims
- 2452US10255976B1Sensing circuit and memory using thereofINSTON INC·Filed 2018·Granted Apr 9, 2019·0 cites·5 claims
- 2550US10726530B2Personal immersion display device and driving method thereofLG DISPLAY CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·12 claims
- 2649US11894050B2Memory with a sense amplifier isolation scheme for enhancing memory read bandwidthQUALCOMM INC·Filed 2021·Granted Feb 6, 2024·0 cites·15 claims
- 2747US2024428831A1Circuit with a low-power charge-sharing light-sleep modeQUALCOMM INC·Filed 2023·Application pending·0 cites
- 2846US11854609B2Memory with reduced capacitance at a sense amplifierQUALCOMM INC·Filed 2021·Granted Dec 26, 2023·0 cites·13 claims
- 2946US2020365222A1Physically unclonable function (puf) in programmable read-only memory (prom)QUALCOMM INC·Filed 2019·Application pending·0 cites
- 3041US9972400B1Nonvolatile memory device and calibration method for the sameINSTON INC·Filed 2017·Granted May 15, 2018·0 cites·16 claims
- 3134US2017372761A1Systems for Source Line Sensing of Magnetoelectric JunctionsINSTON INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →