Inventor · disambiguated record
Hong Lin
Also filed as: LIN HONG · LIN HONG-RONG
10 granted patents·2 pending applications·175 citations·filing 2001–2023
89Inventor score
Files withIBM5SHANGHAI IC R&D CT CO LTD3AHARONI EHUD2Lin hong rong1SHANGHAI INTEGRATED CIRCUIT RES AND DEV CENTER CO LTD1
Top patents by PatentIndex Score
12 records- 0193US10796913B2Method for hybrid wafer-to-wafer bondingSHANGHAI IC R&D CT CO LTD·Filed 2017·Granted Oct 6, 2020·18 cites·10 claims
- 0291US7560758B2MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the sameIBM·Filed 2006·Granted Jul 14, 2009·24 cites·11 claims
- 0389US6775660B2User-oriented method and system for database queryIBM·Filed 2001·Granted Aug 10, 2004·93 cites·35 claims
- 0488US8285414B2Method and system for evaluating a machine tool operating characteristicsAHARONI EHUD·Filed 2009·Granted Oct 9, 2012·22 cites·27 claims
- 0580US7816261B2MOSFETS comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the sameIBM·Filed 2007·Granted Oct 19, 2010·8 cites·16 claims
- 0675US8594826B2Method and system for evaluating a machine tool operating characteristicsAHARONI EHUD·Filed 2012·Granted Nov 26, 2013·3 cites·25 claims
- 0775US7977712B2Asymmetric source and drain field effect structureIBM·Filed 2008·Granted Jul 12, 2011·6 cites·12 claims
- 0859US2025029175A1Diversified system shared rental device and methodLin hong rong·Filed 2023·Application pending·0 cites
- 0955US9640434B2Method for processing an electroplated copper film in copper interconnect processSHANGHAI INTEGRATED CIRCUIT RES AND DEV CENTER CO LTD·Filed 2014·Granted May 2, 2017·1 cites·11 claims
- 1043US9941138B2Method for exposing polysilicon gatesSHANGHAI IC R&D CT CO LTD·Filed 2014·Granted Apr 10, 2018·0 cites·8 claims
- 1138US11393868B2Image sensor and method for manufacturing deep trench and through-silicon via of the image sensorSHANGHAI IC R&D CT CO LTD·Filed 2018·Granted Jul 19, 2022·0 cites·10 claims
- 1238US2007221959A1Structure and method for fabricating recessed channel mosfet with fanned out tapered surface raised source/drainIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →