Inventor · disambiguated record
Hongfa Luan
Also filed as: LUAN HONGFA
21 granted patents·4 pending applications·153 citations·filing 2004–2023
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8INFINEON TECHNOLOGIES AG6LUAN HONGFA4TAIWAN SEMICONDUCTOR MFG3SCHULZ THOMAS2
Top patents by PatentIndex Score
25 records- 0197US7361538B2Transistors and methods of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·71 cites·9 claims
- 0296US10950447B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
- 0395US8889497B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 18, 2014·22 cites·20 claims
- 0494US11776814B2Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 0590US10504735B2Method of forming a semiconductor device by high-pressure anneal and post-anneal treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
- 0689US10714348B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·3 cites·20 claims
- 0785US8188551B2Semiconductor devices and methods of manufacture thereofSCHULZ THOMAS·Filed 2005·Granted May 29, 2012·9 cites·20 claims
- 0885US8017484B2Transistor device and methods of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 13, 2011·8 cites·11 claims
- 0981US7696517B2NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletricINFINEON TECHNOLOGIES AG·Filed 2008·Granted Apr 13, 2010·7 cites·19 claims
- 1078US8722473B2Semiconductor devices and methods of manufacture thereofSCHULZ THOMAS·Filed 2012·Granted May 13, 2014·3 cites·33 claims
- 1176US9659962B2Semiconductor devices and methods of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 23, 2017·2 cites·24 claims
- 1275US9006802B2Semiconductor device manufacturing methods and methods of forming insulating material layersHUANG GIN-CHEN·Filed 2011·Granted Apr 14, 2015·3 cites·20 claims
- 1369US9153657B2Semiconductor devices comprising a finTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·2 cites·20 claims
- 1469US7160781B2Transistor device and methods of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 9, 2007·2 cites·22 claims
- 1568US12183581B2Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1666US7253050B2Transistor device and method of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 7, 2007·12 cites·23 claims
- 1752US10269900B2Semiconductor film with adhesion layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1852US9607826B2Semiconductor device manufacturing methods and methods of forming insulating material layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·0 cites·20 claims
- 1952US9219120B2Semiconductor film with adhesion layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·0 cites·20 claims
- 2049US9660023B2Semiconductor film with adhesion layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 2147US8269289B2Transistor device and methods of manufacture thereofLUAN HONGFA·Filed 2011·Granted Sep 18, 2012·0 cites·21 claims
- 2238US2007059874A1Dual Metal Gate and Method of ManufactureSEMATECH INC·Filed 2006·Application pending·0 cites
- 2333US2008050898A1Semiconductor devices and methods of manufacture thereofLUAN HONGFA·Filed 2006·Application pending·0 cites
- 2433US2007052037A1Semiconductor devices and methods of manufacture thereofLUAN HONGFA·Filed 2006·Application pending·0 cites
- 2532US2007052036A1Transistors and methods of manufacture thereofLUAN HONGFA·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →