Inventor · disambiguated record
Hoon-Jung Oh
Also filed as: OH HOON J · OH HOON-JUNG
10 granted patents·3 pending applications·41 citations·filing 1999–2009
86Inventor score
Top patents by PatentIndex Score
13 records- 0172US7741671B2Capacitor for a semiconductor device and manufacturing method thereofHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jun 22, 2010·4 cites·5 claims
- 0270US6784100B2Capacitor with oxidation barrier layer and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 31, 2004·13 cites·17 claims
- 0362US7498628B2Capacitor for a semiconductor device and manufacturing method thereofHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Mar 3, 2009·2 cites·14 claims
- 0458US6835658B2Method of fabricating capacitor with hafniumHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·6 cites·10 claims
- 0553US6706607B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 16, 2004·4 cites·5 claims
- 0649US6569728B2Method for manufacturing a capacitor for use in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted May 27, 2003·4 cites·17 claims
- 0746US6794241B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 21, 2004·1 cites·7 claims
- 0842US6951795B2Method for fabricating capacitor using metastable-polysilicon processHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Oct 4, 2005·1 cites·9 claims
- 0939US6034778AMethod of measuring surface area variation rate of a polysilicon film having hemispherical grains, and capacitance measuring method and apparatus by the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 7, 2000·6 cites·22 claims
- 1037US2004126964A1Method for fabricating capacitor in semiconductor deviceFiled 2003·Application pending·0 cites
- 1136US2006219259A1Method of cleaning a semiconductor waferHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 1231US2002025624A1Method for manufacturing capacitor for use in semiconductor deviceFiled 2001·Application pending·0 cites
- 1326US6200877B1Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 13, 2001·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →