Inventor · disambiguated record
Hoonseok Seo
Also filed as: SEO HOONSEOK
12 granted patents·7 pending applications·13 citations·filing 2020–2024
84Inventor score
Technology areasH10W
Top patents by PatentIndex Score
19 records- 0195US11881455B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 23, 2024·5 cites·8 claims
- 0293US12125788B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 22, 2024·2 cites·11 claims
- 0390US12230571B2Integrated circuit devices including a power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·3 cites·14 claims
- 0489US11769728B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·9 claims
- 0580US11990409B2Semiconductor device with fine metal lines for BEOL structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 21, 2024·1 cites·14 claims
- 0672US2024429169A1Thermal budget enhanced buried power rail and method of manufacturing the sameSAMSUNG ELECTRONNICS CO LTD·Filed 2024·Application pending·0 cites
- 0770US12243820B2Semiconductor device with fine metal lines for BEOL structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·5 claims
- 0870US12142564B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·11 claims
- 0969US2024297072A1Semi-damascene structure with dielectric hardmask layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1063US12218054B2Method of forming an integrated circuit device having an etch-stop layer between metal wiresSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·22 claims
- 1162US12014951B2Semi-damascene structure with dielectric hardmask layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 18, 2024·0 cites·11 claims
- 1260US11450608B2Integrated circuit devices including metal wires having etch stop layers on sidewalls thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·13 claims
- 1359US2024312903A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1459US2022336355A1Thermal budget enhanced buried power rail and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 1556US12317582B2Integrated circuit devices including a metal resistor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 1656US2024234253A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1754US2024234250A9Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1853US2024258204A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1947US11488864B2Self-aligned supervia and metal direct etching process to manufacture self-aligned superviaSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 1, 2022·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →