Inventor · disambiguated record
Ho-Sung Song
Also filed as: SONG HO-SUNG
22 granted patents·245 citations·filing 1997–2017
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD22
Top patents by PatentIndex Score
22 records- 0187US6756856B2Clock generation circuits and integrated circuit memory devices for controlling a clock period based on temperature and methods for using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 29, 2004·53 cites·27 claims
- 0285US6121677AReduced size integrated circuits and methods using test pads located in scribe regions of integrated circuits wafersSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 19, 2000·76 cites·15 claims
- 0383US9824946B2Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer levelSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·4 cites·19 claims
- 0472US9264039B2Circuit and method for on-die termination, and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 16, 2016·3 cites·20 claims
- 0571US7319634B2Address converter semiconductor device and semiconductor memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 15, 2008·8 cites·33 claims
- 0670US9396771B2Memory device for performing multi-core access to bank groupsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 19, 2016·3 cites·13 claims
- 0770US6366155B1Reference voltage generators and methods including supplementary current generation, and integrated circuits including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 2, 2002·15 cites·40 claims
- 0868US10008247B2Memory device for performing multi-core access to bank groupsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·2 cites·10 claims
- 0967US10163741B2Scribe lane structure in which pad including via hole is arranged on sawing lineSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·11 claims
- 1065US5959906ASemiconductor memory device with a fully accessible redundant memory cell arraySAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 28, 1999·25 cites·7 claims
- 1164US9461656B2Injection-locked phase locked loop circuits using delay locked loopsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 4, 2016·2 cites·20 claims
- 1263US7027339B2Memory device employing open bit line architecture for providing identical data topology on repaired memory cell block and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 11, 2006·5 cites·13 claims
- 1360US6577554B2Semiconductor memory device for providing margin of data setup time and data hold time of data terminalSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 10, 2003·12 cites·17 claims
- 1458US6310796B1Dynamic random access memory device and μBGA package using multiple reference voltage padsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 30, 2001·10 cites·28 claims
- 1557US9053774B2Duty cycle corrector and systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·1 cites·20 claims
- 1652US7599234B2Semiconductor memory devices having signal delay controller and methods performed thereinSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·2 cites·16 claims
- 1752US6239642B1Integrated circuits with variable signal line loading circuits and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 29, 2001·16 cites·32 claims
- 1846US6538337B2Ball grid array package for providing constant internal voltage via a PCB substrate routing configurationSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 25, 2003·2 cites·11 claims
- 1941US8027219B2Semiconductor memory devices having signal delay controller and methods performed thereinSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 27, 2011·0 cites·16 claims
- 2036US6178109B1Integrated circuit memory devices having reduced susceptibility to reference voltage signal noiseSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 23, 2001·4 cites·26 claims
- 2133US6906963B2Semiconductor memory device having output driver for high frequency operationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 14, 2005·0 cites·9 claims
- 2225US6115311ASemiconductor memory device capable of selecting a plurality of refresh cycle modesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 5, 2000·1 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →