Inventor · disambiguated record
Hongmei Wang
Also filed as: WANG HONGMEI
72 granted patents·10 pending applications·762 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
82 records- 0198US11139034B1Data-based polarity write operationsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 5, 2021·11 cites·25 claims
- 0298US10269442B1Drift mitigation with embedded refreshMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·26 cites·20 claims
- 0397US7224020B2Integrated circuit device having non-linear active area pillarsMICRON TECHNOLOGY INC·Filed 2005·Granted May 29, 2007·57 cites·24 claims
- 0496US9293648B1Light emitter with a conductive transparent p-type layer structureBOLB INC·Filed 2015·Granted Mar 22, 2016·7 cites·19 claims
- 0596US7383463B2Internet protocol based disaster recovery of a serverEMC CORP·Filed 2004·Granted Jun 3, 2008·244 cites·9 claims
- 0695US7638392B2Methods of forming capacitor structuresMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 29, 2009·23 cites·25 claims
- 0794US6812103B2Methods of fabricating a dielectric plug in MOSFETS to suppress short-channel effectsMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 2, 2004·68 cites·57 claims
- 0891US9171863B2Methods and apparatuses including strings of memory cells formed along levels of semiconductor materialMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 27, 2015·10 cites·23 claims
- 0991US6934822B2Organization of multiple snapshot copies in a data storage systemEMC CORP·Filed 2002·Granted Aug 23, 2005·91 cites·54 claims
- 1089US10910438B2Memory array with graded memory stack resistancesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 2, 2021·4 cites·19 claims
- 1189US7230343B2High density memory array having increased channel widthsMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 12, 2007·12 cites·21 claims
- 1288US7935602B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted May 3, 2011·15 cites·14 claims
- 1388US7154146B2Dielectric plug in mosfets to suppress short-channel effectsMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 26, 2006·12 cites·31 claims
- 1486US11100986B2Discharge current mitigation in a memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 24, 2021·6 cites·25 claims
- 1586US7442600B2Methods of forming threshold voltage implant regionsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 28, 2008·23 cites·11 claims
- 1686US7253493B2High density access transistor having increased channel width and methods of fabricating such devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 7, 2007·25 cites·24 claims
- 1786US7189606B2Method of forming fully-depleted (FD) SOI MOSFET access transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 13, 2007·25 cites·14 claims
- 1885US8912589B2Methods and apparatuses including strings of memory cells formed along levels of semiconductor materialWANG HONGMEI·Filed 2011·Granted Dec 16, 2014·7 cites·24 claims
- 1983US7667234B2High density memory array having increased channel widthsMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 23, 2010·6 cites·24 claims
- 2081US11217322B2Drift mitigation with embedded refreshMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 4, 2022·1 cites·17 claims
- 2181US8723159B2Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the sameZHANG JIANPING·Filed 2011·Granted May 13, 2014·4 cites·23 claims
- 2280US11244717B2Write operation techniques for memory systemsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 8, 2022·4 cites·35 claims
- 2379US8785904B2Light-emitting device with low forward voltage and method for fabricating the sameZHANG JIANPING·Filed 2011·Granted Jul 22, 2014·3 cites·13 claims
- 2478US10672500B2Non-contact measurement of memory cell threshold voltageMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 2, 2020·2 cites·20 claims
- 2578US7440255B2Capacitor constructions and methods of formingMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 21, 2008·20 cites·56 claims
- 2676US12033753B2Medical device data analysisMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 9, 2024·1 cites·19 claims
- 2776US10650891B2Non-contact electron beam probing techniques and related structuresMICRON TECHNOLOGY INC·Filed 2019·Granted May 12, 2020·3 cites·17 claims
- 2874US6977419B2MOSFETs including a dielectric plug to suppress short-channel effectsMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 20, 2005·14 cites·15 claims
- 2973US10248351B1Set technique for phase change memoryINTEL CORP·Filed 2017·Granted Apr 2, 2019·1 cites·24 claims
- 3073US7332767B2High density memory devices having improved channel widths and cell sizeMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 19, 2008·3 cites·26 claims
- 3173US2024363241A1Medical device data analysisMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3271US10930345B1Voltage profile for reduction of read disturb in memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 23, 2021·2 cites·17 claims
- 3370US9575727B2Methods for generating random data using phase change materials and related devices and systemsSARPATWARI KARTHIK·Filed 2014·Granted Feb 21, 2017·2 cites·20 claims
- 3469US10403359B2Non-contact electron beam probing techniques and related structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 3, 2019·2 cites·5 claims
- 3569US7517743B2Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabricationMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 14, 2009·2 cites·15 claims
- 3668US8707018B1Managing initialization of file systemsHOOKER RICHARD A·Filed 2011·Granted Apr 22, 2014·5 cites·15 claims
- 3767US11710528B2Data-based polarity write operationsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 3867US10748615B2Polarity-conditioned memory cell write operationsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 18, 2020·2 cites·20 claims
- 3967US8148225B2Fully-depleted (FD)(SOI) MOSFET access transistor and method of fabricationWANG HONGMEI·Filed 2009·Granted Apr 3, 2012·2 cites·18 claims
- 4066US11710517B2Write operation techniques for memory systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 25, 2023·0 cites·20 claims
- 4166US10777291B2Drift mitigation with embedded refreshMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 15, 2020·1 cites·20 claims
- 4265US10354729B1Polarity-conditioned memory cell write operationsMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 16, 2019·2 cites·12 claims
- 4364US10884640B2Set technique for phase change memoryINTEL CORP·Filed 2019·Granted Jan 5, 2021·1 cites·27 claims
- 4464US2025374525A1Microelectronic devices comprising asymmetric word lines, and related methods and electronic systemsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4563US11430518B1Conditional drift cancellation operations in programming memory cells to store dataMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 30, 2022·0 cites·20 claims
- 4663US11380394B2Voltage profile for reduction of read disturb in memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 5, 2022·0 cites·20 claims
- 4762US7151303B2Fully-depleted (FD) (SOI) MOSFET access transistorMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 19, 2006·6 cites·5 claims
- 4862US2022415394A1Conditional Drift Cancellation Operations in Programming Memory Cells to Store DataMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 4961US10986440B2EarbudGOERTEK INC·Filed 2019·Granted Apr 20, 2021·1 cites·17 claims
- 5059US11538860B2Memory array with graded memory stack resistancesMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 27, 2022·0 cites·18 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →