Inventor · disambiguated record
Hongyong Xue
Also filed as: XUE HONGYONG
16 granted patents·1 pending application·63 citations·filing 2000–2021
91Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD8ALPHA & OMEGA SEMICONDUCTOR5ALPHA & OMEGA SEMICONDUCTOR INCORPORATED2ALPHA & OMEGA SEMICONDUCTOR INT LP1INTEGRATED DEVICE TECH1
Top patents by PatentIndex Score
17 records- 0195US9281368B1Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·20 cites·10 claims
- 0292US10170559B1Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication methodALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Granted Jan 1, 2019·9 cites·16 claims
- 0387US10020380B2Power device with high aspect ratio trench contacts and submicron pitches between trenchesALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2015·Granted Jul 10, 2018·5 cites·10 claims
- 0487US9865694B2Split-gate trench power mosfet with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 9, 2018·4 cites·19 claims
- 0585US9691863B2Self-aligned contact for trench power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Jun 27, 2017·4 cites·8 claims
- 0683US9741808B2Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 22, 2017·3 cites·23 claims
- 0781US11031465B2Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Jun 8, 2021·2 cites·10 claims
- 0877US10644118B2Self-aligned contact for trench power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted May 5, 2020·2 cites·11 claims
- 0972US10424654B2Power device with high aspect ratio trench contacts and submicron pitches between trenchesALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2018·Granted Sep 24, 2019·1 cites·13 claims
- 1071US10686038B2Reverse conducting IGBT incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 1168US11749716B2Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2021·Granted Sep 5, 2023·0 cites·13 claims
- 1267US6872668B1Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structureINTEGRATED DEVICE TECH·Filed 2000·Granted Mar 29, 2005·11 cites·21 claims
- 1365US10833021B2Method for precisely aligning backside pattern to frontside pattern of a semiconductor waferALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2018·Granted Nov 10, 2020·1 cites·14 claims
- 1455US10763125B2Semiconductor device having one or more titanium interlayers and method of making the sameALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Sep 1, 2020·0 cites·13 claims
- 1552US11699627B2DMOS FET chip scale package and method of making the sameALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2021·Granted Jul 11, 2023·0 cites·17 claims
- 1652US2019006461A1Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Application pending·0 cites
- 1751US10438813B2Semiconductor device having one or more titanium interlayers and method of making the sameALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Granted Oct 8, 2019·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →