Inventor · disambiguated record
Hong Ying
Also filed as: YING HONG
15 granted patents·1 pending application·84 citations·filing 2000–2023
91Inventor score
Files withSHARP LAB OF AMERICA INC8LSI CORP2LSI LOGIC CORP2SHANDONG SINOCERA FUNCTIONAL MAT CO LTD2BHATT HEMANSHU1
Top patents by PatentIndex Score
16 records- 0180US6555874B1Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrateSHARP LAB OF AMERICA INC·Filed 2000·Granted Apr 29, 2003·27 cites·12 claims
- 0276US7205673B1Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processingLSI LOGIC CORP·Filed 2005·Granted Apr 17, 2007·7 cites·3 claims
- 0372US8552560B2Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processingBHATT HEMANSHU·Filed 2005·Granted Oct 8, 2013·7 cites·3 claims
- 0472US6440752B1Electrode materials with improved hydrogen degradation resistance and fabrication methodSHARP LAB OF AMERICA INC·Filed 2001·Granted Aug 27, 2002·12 cites·7 claims
- 0570US7531442B2Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processingLSI CORP·Filed 2005·Granted May 12, 2009·5 cites·4 claims
- 0664US6630702B2Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Oct 7, 2003·7 cites·10 claims
- 0764US6503763B2Method of making MFMOS capacitors with high dielectric constant materialsSHARP LAB OF AMERICA INC·Filed 2001·Granted Jan 7, 2003·9 cites·3 claims
- 0851US6833572B2Electrode materials with improved hydrogen degradation resistanceSHARP LAB OF AMERICA INC·Filed 2002·Granted Dec 21, 2004·2 cites·8 claims
- 0951US6815342B1Low resistance metal interconnect lines and a process for fabricating themLSI LOGIC CORP·Filed 2001·Granted Nov 9, 2004·5 cites·7 claims
- 1050US6541385B2Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaningSHARP LAB OF AMERICA INC·Filed 2001·Granted Apr 1, 2003·2 cites·17 claims
- 1150US2014030541A1Alternate pad structures/passivation integration schemes to reduce or eliminate imc cracking in post wire bonded dies during cu/low-k beol processingLSI CORP·Filed 2013·Application pending·0 cites
- 1248US6759252B2Method and device using titanium doped aluminum oxide for passivation of ferroelectric materialsSHARP LAB OF AMERICA INC·Filed 2003·Granted Jul 6, 2004·1 cites·14 claims
- 1341USD1072336SElectronic cigarette atomizerSHANDONG SINOCERA FUNCTIONAL MAT CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·1 claims
- 1441USD1072337SElectronic cigarette atomizerSHANDONG SINOCERA FUNCTIONAL MAT CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·1 claims
- 1540US8076779B2Reduction of macro level stresses in copper/low-K wafersSUN SEY-SHING·Filed 2005·Granted Dec 13, 2011·0 cites·4 claims
- 1639US6716645B2MFMOS capacitors with high dielectric constant materialsSHARP LAB OF AMERICA INC·Filed 2002·Granted Apr 6, 2004·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →