Inventor · disambiguated record
Hongro Yun
Also filed as: YUN HONGRO
2 granted patents·3 citations·filing 2019–2019
39Inventor score
Technology areasH10D
Files withUNIV HANYANG IND UNIV COOP FOUND2
Top patents by PatentIndex Score
2 records- 0180US11177449B2P-type semiconductor layer, P-type multilevel element, and manufacturing method for the elementUNIV HANYANG IND UNIV COOP FOUND·Filed 2019·Granted Nov 16, 2021·3 cites·23 claims
- 0251US11316048B2Tin oxide layer, TFT having the same as channel layer, and manufacturing method for the TFTUNIV HANYANG IND UNIV COOP FOUND·Filed 2019·Granted Apr 26, 2022·0 cites·17 claims
Join the waitlist — get patent alerts
Get an alert when Hongro Yun files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →