Inventor · disambiguated record
Hongbin Zhu
Also filed as: ZHU HONGBIN
91 granted patents·33 pending applications·284 citations·filing 1999–2025
99Inventor score
Files withYANGTZE MEMORY TECH CO LTD64MICRON TECHNOLOGY INC41INTEL CORP8ZHU HONGBIN3INNOVATION ACAD FOR MICROSATELLITES OF CHINESE ACAD OF SCIENCES1
Top patents by PatentIndex Score
124 records- 0196US10566336B1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 18, 2020·11 cites·17 claims
- 0296US10090318B2Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structureMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 2, 2018·23 cites·19 claims
- 0395US12170258B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 17, 2024·3 cites·18 claims
- 0495US9595531B2Aluminum oxide landing layer for conductive channels for a three dimensional circuit deviceINTEL CORP·Filed 2014·Granted Mar 14, 2017·12 cites·14 claims
- 0594US12080665B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 0694US10242995B2Drain select gate formation methods and apparatusMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 26, 2019·8 cites·14 claims
- 0794US9431410B2Methods and apparatuses having memory cells including a monolithic semiconductor channelMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 30, 2016·15 cites·11 claims
- 0894US9048194B2Method for selectively modifying spacing between pitch multiplied structuresMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 2, 2015·12 cites·20 claims
- 0993US12176310B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 24, 2024·2 cites·20 claims
- 1093US11205659B2Interconnect structures of three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Dec 21, 2021·8 cites·11 claims
- 1193US9659949B2Integrated structuresMICRON TECHNOLOGY INC·Filed 2015·Granted May 23, 2017·9 cites·14 claims
- 1293US2025359048A1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1392US8173507B2Methods of forming integrated circuitry comprising charge storage transistorsLIM CHAN·Filed 2010·Granted May 8, 2012·63 cites·23 claims
- 1491US9741734B2Memory devices and systems having reduced bit line to drain select gate shorting and associated methodsINTEL CORP·Filed 2015·Granted Aug 22, 2017·8 cites·12 claims
- 1591US9613973B2Memory having a continuous channelMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 4, 2017·5 cites·24 claims
- 1691US8030218B2Method for selectively modifying spacing between pitch multiplied structuresMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 4, 2011·12 cites·18 claims
- 1790US11088168B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 10, 2021·2 cites·14 claims
- 1889US12349341B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 1, 2025·1 cites·20 claims
- 1989US10707121B2Solid state memory device, and manufacturing method thereofINTEL CORP·Filed 2016·Granted Jul 7, 2020·9 cites·24 claims
- 2089US10134758B2Memory devices and systems having reduced bit line to drain select gate shorting and associated methodsINTEL CORP·Filed 2017·Granted Nov 20, 2018·6 cites·20 claims
- 2188US2024373637A1Memory Circuitry Comprising a Vertical String of Memory Cells and a Conductive Via and Method Used in Forming a Vertical String of Memory Cells and a Conductive ViaMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2287US12033967B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 9, 2024·1 cites·20 claims
- 2386US12408338B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 2, 2025·1 cites·20 claims
- 2486US11532636B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 20, 2022·1 cites·20 claims
- 2586US2025349792A1Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2685US10504859B2Electronic component guard ringINTEL CORP·Filed 2016·Granted Dec 10, 2019·3 cites·13 claims
- 2785US10038002B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 31, 2018·3 cites·6 claims
- 2885US2024032293A1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2984US11792979B2Three-dimensional memory device having multi-deck structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 17, 2023·1 cites·20 claims
- 3084US10790297B2Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layerYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
- 3184US10269819B2Integrated structures and methods of forming vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·3 cites·13 claims
- 3283US10090317B2Methods and apparatuses having memory cells including a monolithic semiconductor channelMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 2, 2018·3 cites·19 claims
- 3383US2023255025A1Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3482US10608004B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 31, 2020·2 cites·8 claims
- 3582US2024332167A1Self-aligned contacts in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3681US11004948B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted May 11, 2021·2 cites·20 claims
- 3781US10811380B2Semiconductor structure and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 20, 2020·3 cites·16 claims
- 3880US2025089254A1Bonded memory device and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3979US11114453B2Bonded memory device and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 7, 2021·2 cites·22 claims
- 4079US11043505B2Three-dimensional memory device having multi-deck structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 22, 2021·2 cites·17 claims
- 4178US12279420B2Memory having a continuous channelMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 15, 2025·0 cites·7 claims
- 4278US12074105B2Self-aligned contacts in three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 4378US10818631B2Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·16 claims
- 4478US10553611B2Memory arrays and methods of fabricating integrated structureMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 4, 2020·1 cites·9 claims
- 4578US2025151274A1Memory Circuitry Comprising a Vertical String of Memory Cells and a Conductive Via and Method Used in Forming a Vertical String of Memory Cells and a Conductive ViaMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4678US2025227927A1Memory having a continuous channelMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4777US8507384B2Method for selectively modifying spacing between pitch multiplied structuresZHU HONGBIN·Filed 2011·Granted Aug 13, 2013·3 cites·19 claims
- 4877US2025336865A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 4976US11690219B2Three-dimensional memory devices having through array contacts and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 5076US8963156B2Semiconductor devices including WiSXMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 24, 2015·3 cites·9 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →